Interface phenomena at semiconductor heterojunctions: Local-density valence-band offset in GaAs/AlAs

1987 ◽  
Vol 35 (18) ◽  
pp. 9871-9874 ◽  
Author(s):  
S. Massidda ◽  
B. I. Min ◽  
A. J. Freeman
Keyword(s):  
Valence Band ◽  
Local Density ◽  
Band Offset ◽  
Valence Band Offset ◽  
Interface Phenomena ◽  
Semiconductor Heterojunctions

Effect of Strain and Interface Interdiffusion on the Valence Band Offset at Si/Ge Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Mark S. Hybertsen
Keyword(s):  
Valence Band ◽  
Density Functional ◽  
Local Density ◽  
Interface Layer ◽  
Band Offset ◽  
Valence Band Offset ◽  
Interface Dipole ◽  
Strain Parameter ◽  
Interface Unit ◽  
Abrupt Interface

ABSTRACTThe valence band offset for the Si/Ge interface is studied using the local density functional approach with a superlattice geometry. The effect of non-abrupt interfaces is modeled by including an interface layer of Si5 Ge0 5 ordered in a interface unit cell. The change in valence band offset is less than 0.01 eV. For an abrupt interface, the offset is found to be a function of strain in the Ge. The interface dipole is proportional to the perpendicular strain parameter which yields an interface contribution to the energy of the strained epitaxial Ge layers. The equilibrium strain parameter in epitaxial Ge differs from that in biaxially compressed bulk Ge.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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