Ultrasonic attenuation and electron mean free path in aluminum from measurements in a high transverse magnetic field

1987 ◽  
Vol 35 (3) ◽  
pp. 946-951 ◽  
Author(s):  
B. Berre
Keyword(s):  
Magnetic Field ◽  
Free Path ◽  
Transverse Magnetic Field ◽  
Ultrasonic Attenuation ◽  
Mean Free Path ◽  
Transverse Magnetic ◽  
Electron Mean Free Path

The oscillatory galvanomagnetic size-effect in multilayered structures

Open Physics ◽  
2007 ◽  
Vol 5 (1) ◽  
Author(s):  
Leonid Dekhtyaruk
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Electron Scattering ◽  
Oscillation Amplitude ◽  
Mean Free Path ◽  
Transverse Magnetic ◽  
Multilayered Structures ◽  
Adjacent Layer ◽  
Wide Range ◽  
Electron Mean Free Path

AbstractWithin the framework of the modified semi-classical Fuchs-Sondheimer model, we investigated theoretically the electrical resistivity of multilayered structures (MLS) consisting of alternating metallic layers (of different purity and different thicknesses) in a transverse magnetic field as functions of the ratio of the adjacent layer thicknesses and the magnetic field value. We have derived both a general formula (valid at arbitrary values of layer thicknesses) and asymptotic expressions that are valid when metallic layers are thick or thin compared with the electron mean free path. We found a non-monotonic behavior in the resistivity vs. the value of an applied magnetic field. As we demonstrated, this behavior is sensitive to the characteristics of the electron scattering in the interlayer interfaces in low magnetic fields. Moreover, the MLS resistivity oscillates in high magnetic fields with the field value (or with the layer thicknesses). The oscillation includes the harmonics that correspond both to the each layer thicknesses and the total thickness. The intensity of the oscillation is determined by the diffusive electron scattering in the interfaces, and the oscillation amplitude is proportional to the coefficient of the electron transmission through the interlayer interfaces. We have calculated numerically the resistivity in a wide range of fields and layer thicknesses at various values of the parameters of the interface and bulk electron scattering.

Numerical study of the effect of transverse magnetic field on cylindrical and hemispherical CZ crystal growth of silicon

2010 ◽  
Vol 46 (4) ◽  
pp. 393-402 ◽  
Author(s):  
F. Mokhtari ◽  
A. Bouabdallah ◽  
A. Merah ◽  
S. Hanchi ◽  
A. Alemany
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Transverse Magnetic Field ◽  
Numerical Study ◽  
Transverse Magnetic

Heat Transfer in Liquid Metal at an Upward Flow in a Pipe in Transverse Magnetic Field

2020 ◽  
Vol 58 (3) ◽  
pp. 400-409
Author(s):  
N. A. Luchinkin ◽  
N. G. Razuvanov ◽  
I. A. Belyaev ◽  
V. G. Sviridov
Keyword(s):  
Magnetic Field ◽  
Heat Transfer ◽  
Liquid Metal ◽  
Transverse Magnetic Field ◽  
Transverse Magnetic ◽  
Upward Flow
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