Constant-dipole-matrix-element model for Faraday rotation in amorphous semiconductors

1987 ◽  
Vol 35 (17) ◽  
pp. 9298-9300 ◽  
Author(s):  
B. Vanhuyse ◽  
W. Grevendonk ◽  
G. J. Adriaenssens ◽  
J. Dauwen
Keyword(s):  
Matrix Element ◽  
Faraday Rotation ◽  
Element Model ◽  
Amorphous Semiconductors ◽  
Dipole Matrix Element

Electric-dipole matrix-element formulas in hyperspherical coordinates with applications toH−and He

1986 ◽  
Vol 33 (2) ◽  
pp. 1000-1007 ◽  
Author(s):  
Chang-Hwan Park ◽  
Anthony F. Starace ◽  
Jiang Tan ◽  
Chii-Dong Lin
Keyword(s):  
Matrix Element ◽  
Electric Dipole ◽  
Dipole Matrix Element ◽  
Hyperspherical Coordinates

An analytical approach for the energy spectrum and optical properties of gated bilayer graphene

RSC Advances ◽  
2014 ◽  
Vol 4 (61) ◽  
pp. 32117-32126 ◽  
Author(s):  
Cheng-Peng Chang
Keyword(s):  
Optical Properties ◽  
Energy Spectrum ◽  
Matrix Element ◽  
Absorption Spectra ◽  
Analytical Approach ◽  
Bilayer Graphene ◽  
Wave Functions ◽  
Dipole Matrix Element ◽  
Exact Energy

An analytical approach is developed to access the exact energy spectrum, wave functions, dipole matrix element (Mfi) and absorption spectra (A(ω)) of gated Bernal bilayer graphene.

Subband Structure and Optical Transitions in a Superlattice with Electron Quasi-Localised States in Unit Cell

1999 ◽  
Vol 579 ◽  
Author(s):  
A.V. Dmitriev ◽  
V.V. Makeev
Keyword(s):  
Matrix Element ◽  
Dispersion Relation ◽  
Band Structure ◽  
Electron Spectrum ◽  
Unit Cell ◽  
Wave Functions ◽  
Optical Transitions ◽  
Dipole Matrix Element ◽  
Localised States ◽  
Subband Structure

ABSTRACTWe studied theoretically the electron spectrum and infrared transitions in a superlattice with a unit cell allowing for quasi-localised carrier states. The dispersion relation and the band structure of such a system have been found. We also calculated the dipole matrix element for inter-subband carrier infrared transitions. The wave functions and the electron spectrum in this superlattice show a peculiarity when the energy of a band state approaches the energy of the quasi-localised state in the single cell. In particular, the absorption strength peaks up at the respective frequencies.

An Intrinsic Model for Radiative Recombination in Porous Silicon

1991 ◽  
Vol 256 ◽  
Author(s):  
Mark S. Hybertsen
Keyword(s):  
Matrix Element ◽  
Porous Silicon ◽  
Radiative Recombination ◽  
Energy Shift ◽  
Short Length ◽  
Length Scale ◽  
Dipole Matrix Element ◽  
Light Emitting ◽  
Recombination Time

A microcrystalline model for the light emitting portion of porous silicon is outlined. Confinement to a short length scale induces an effective direct dipole matrix element for radiative recombination. The radiative recombination time is strongly size (hence confinement induced energy shift) dependent, and in the microsecond regime for blue shifts of ˜1 eV. Trends and comparison to experiment are discussed.

Measurement of Dipole Matrix Element of Atomic Gd Transitions using Rabi Flopping

1990 ◽  
Vol 29 (Part 2, No. 5) ◽  
pp. L833-L836 ◽  
Author(s):  
Satoru Adachi ◽  
Hideaki Niki ◽  
Yasukazu Izawa ◽  
Sadao Nakai ◽  
Chiyoe Yamanaka
Keyword(s):  
Matrix Element ◽  
Dipole Matrix Element

Singular part of the hydrogen dipole matrix element

1989 ◽  
Vol 22 (13) ◽  
pp. 2369-2374 ◽  
Author(s):  
J L Madajczyk ◽  
M Trippenbach
Keyword(s):  
Matrix Element ◽  
Singular Part ◽  
Dipole Matrix Element
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