Shifts and splittings of electron energy levels ofAcenters in silicon under uniaxial stress

1987 ◽  
Vol 35 (11) ◽  
pp. 5734-5739 ◽  
Author(s):  
Xiu-chen Yao ◽  
Jian-xun Mou ◽  
Guo-gang Qin
Keyword(s):  
Electron Energy ◽  
Energy Levels ◽  
Uniaxial Stress

scholarly journals Low-lying electron energy levels in three-particle electron-muon ions of Li, Be, and B

2021 ◽  
Vol 103 (5) ◽  
Author(s):  
A. E. Dorokhov ◽  
V. I. Korobov ◽  
A. P. Martynenko ◽  
F. A. Martynenko
Keyword(s):  
Electron Energy ◽  
Energy Levels

Electron Energy Levels: Electron Spectroscopy and Related Methods

1986 ◽  
pp. 261-283
Author(s):  
John R. Wright ◽  
Wayne A. Hendrickson ◽  
Shigemasa Osaki ◽  
Gordon T. James
Keyword(s):  
Electron Energy ◽  
Electron Spectroscopy ◽  
Energy Levels

scholarly journals Влияние одноосной деформации в направлении [110] на релаксацию состояний мелких доноров мышьяка в германии

2020 ◽  
Vol 54 (9) ◽  
pp. 918
Author(s):  
В.В. Цыпленков ◽  
В.Н. Шастин
Keyword(s):  
Energy Levels ◽  
Optical Excitation ◽  
Uniaxial Stress ◽  
Shallow Donor ◽  
Stimulated Emission ◽  
Relaxation Rates ◽  
Emission Frequency ◽  
Donor States ◽  
Uniaxial Compressive Stress ◽  
Intracenter Transitions

Analysis of acoustical phonon assisted relaxation rates of arsenic donor states has been carried out in depends on uniaxial compressive stress of crystal along [110] direction under low temperature (< 10 K). As shown, under optical excitation the inversion population of donor energy levels is formed that depends on deformation of crystal. This give grounds to suppose that stimulated emission on arsenic shallow donor intracenter transitions in THz range is possible under optical excitation. As shown, uniaxial stress along [110] direction can result to switch laser transition and stimulated emission frequency

scholarly journals Theoretical Bounds on Electron Energy Filtering in Disordered Nanomaterials

2019 ◽  
Author(s):  
Amro Dodin ◽  
Brian F. Aull ◽  
Roderick R. Kunz ◽  
Adam Willard
Keyword(s):  
Theoretical Model ◽  
Electron Energy ◽  
Energy Levels ◽  
Additional Source ◽  
Discrete Energy ◽  
Energy Filtering ◽  
Simple Theoretical Model ◽  
Particle Polydispersity ◽  
Electron Energy Filtering ◽  
Individual Nanoparticles

This manuscript presents a theoretical model for determining the electron energy filtering properties of nanocomposite materials. Individual nanoparticles can serve as energy filters for tunneling electrons due their discretized energy levels. Nanomaterials comprised of many individual nanoparticles can in principle serve the same purpose, however, particle polydispersity can lead to an additional source of energetic broadening. We describe a simple theoretical model that includes the effects of discrete energy levels and inhomogeneous broadening. We use this model to identify the material parameters needed for effective energy filtering by quantum dot solids.

scholarly journals Energy Levels in Nanowires and Nanorods with a Finite Potential Well

2020 ◽  
Vol 2020 ◽  
pp. 1-12
Author(s):  
G. Gulyamov ◽  
A. G. Gulyamov ◽  
A. B. Davlatov ◽  
Kh. N. Juraev
Keyword(s):  
Electron Energy ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Energy Levels ◽  
Electron Energy Spectrum ◽  
Constant Thickness ◽  
Potential Well ◽  
Discrete Level ◽  
Effective Masses ◽  
Internal Radius

The energy of electrons and holes in cylindrical quantum wires with a finite potential well was calculated by two methods. An analytical expression is approximately determined that allows one to calculate the energy of electrons and holes at the first discrete level in a cylindrical quantum wire. The electron energy was calculated by two methods for cylindrical layers of different radius. In the calculations, the nonparabolicity of the electron energy spectrum is taken into account. The dependence of the effective masses of electrons and holes on the radius of a quantum wires is determined. An analysis is made of the dependence of the energy of electrons and holes on the internal and external radii, and it is determined that the energy of electrons and holes in cylindrical layers with a constant thickness weakly depends on the internal radius. The results were obtained for the InP/InAs heterostructures.

Electron energy levels in GaAs-Ga1−xAlxAsheterojunctions

1984 ◽  
Vol 30 (2) ◽  
pp. 840-848 ◽  
Author(s):  
Frank Stern ◽  
Sankar Das Sarma
Keyword(s):  
Electron Energy ◽  
Energy Levels
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