High-pressure x-ray-diffraction and optical-absorption studies ofNH4I to 75 GPa

1987 ◽  
Vol 35 (10) ◽  
pp. 4954-4958 ◽  
Author(s):  
Seung-Joon Jeon ◽  
Richard F. Porter ◽  
Yogesh K. Vohra ◽  
Arthur L. Ruoff
Keyword(s):  
High Pressure ◽  
Optical Absorption ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Studies

A diamond anvil cell with resistive heating for high pressure and high temperature x-ray diffraction and absorption studies

2008 ◽  
Vol 79 (8) ◽  
pp. 085103 ◽  
Author(s):  
Sebastien Pasternak ◽  
Giuliana Aquilanti ◽  
Sakura Pascarelli ◽  
Roberta Poloni ◽  
Bernard Canny ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Diamond Anvil Cell ◽  
X Ray Diffraction ◽  
Resistive Heating ◽  
X Ray ◽  
Absorption Studies ◽  
Diamond Anvil

Optical Properties of CulnSi Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering

2011 ◽  
Vol 403-408 ◽  
pp. 1089-1093
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Luan Ping
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Optical Absorption ◽  
Nanocomposite Films ◽  
Nanocomposite Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Double Beam ◽  
Absorption Studies ◽  
Xrd Studies

Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction(XRD); XRD studies of the annealed films indicate the presence of CuInSi, the main crystal phase peak is at 2θ=42.400°. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi.

Thin CuInSi Film Deposited by Magnetron Co-Sputtering

2012 ◽  
Vol 433-440 ◽  
pp. 302-305
Author(s):  
Jian Sheng Xie ◽  
Jin Hua Li ◽  
Ping Luan
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Optical Absorption ◽  
Automatic Control ◽  
Band Gap ◽  
Film Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Studies ◽  
Different Temperatures

Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

Synchrotron X-ray diffraction and absorption studies of CeM2X2 (M=Cu, Ni and X=Si, Ge) at high pressure

2005 ◽  
Vol 134 (11) ◽  
pp. 747-751 ◽  
Author(s):  
S. Tsuduki ◽  
A. Onodera ◽  
K. Ishida ◽  
Y. Kitaoka ◽  
A. Onuki ◽  
...  
Keyword(s):  
High Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Studies
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