Picosecond time-resolved Raman studies of the expansion of the electron-hole plasma in Si

1987 ◽  
Vol 35 (8) ◽  
pp. 4134-4136 ◽  
Author(s):  
K. T. Tsen
1980 ◽  
Vol 33 (1) ◽  
pp. 161-165 ◽  
Author(s):  
H. Yoshida ◽  
H. Saito ◽  
S. Shionoya ◽  
V.B. Timofeev

1996 ◽  
Vol 80 (9) ◽  
pp. 5129-5137 ◽  
Author(s):  
E. Poles ◽  
S. Y. Goldberg ◽  
B. Fainberg ◽  
D. Huppert ◽  
M. C. Hanna ◽  
...  

1989 ◽  
Vol 40 (11) ◽  
pp. 8103-8106 ◽  
Author(s):  
K. T. Tsen ◽  
G. Halama ◽  
O. F. Sankey ◽  
S.-C. Y. Tsen ◽  
H. Morkoc

1982 ◽  
Vol 13 ◽  
Author(s):  
R. Yen ◽  
C. V. Shank ◽  
C. Hirlimann

ABSTRACTWe report measurements of the time resolved reflectivity of Silicon following excitation with an intense 90 femtosecond optical pulse. These measurements clearly time resolve the process of energy transfer from the optically excited electron-hole plasma to the crystal lattice and subsequent melting within the first few picoseconds.


Sign in / Sign up

Export Citation Format

Share Document