Electronic band structure of rhombohedral arsenic studied by angle-resolved photoemission with synchrotron radiation

1987 ◽  
Vol 35 (8) ◽  
pp. 4089-4092
Author(s):  
T. Takahashi ◽  
H. Ohsawa ◽  
N. Gunasekara ◽  
H. Ishii ◽  
T. Kinoshita ◽  
...  
1993 ◽  
Vol 46 (5) ◽  
pp. 717 ◽  
Author(s):  
Robert Leckey ◽  
John Riley ◽  
Yong Cai ◽  
Jurgen Faul ◽  
Lothar Ley

Both the calculation and the experimental determination of the band structure of simple materials using the techniques of photoemission have now reached levels of considerable sophistication and maturity. Indeed, it is often claimed that the determination of the detailed electronic band structure of semiconductors, for example, is almost routine using angle-resolved photoelectron spectroscopy in conjunction with synchrotron radiation. In this paper we will discuss the extent to which this claim is justified, illustrating the discussion with recent results from a number of III/V semiconductors. We will demonstrate the model-dependent nature of current interpretations of the experimental data, and will show that the technique is presently limited due to the scarcity of information concerning excited band states well above the vacuum level.


Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER

2018 ◽  
Vol 1 (1) ◽  
pp. 46-50
Author(s):  
Rita John ◽  
Benita Merlin

In this study, we have analyzed the electronic band structure and optical properties of AA-stacked bilayer graphene and its 2D analogues and compared the results with single layers. The calculations have been done using Density Functional Theory with Generalized Gradient Approximation as exchange correlation potential as in CASTEP. The study on electronic band structure shows the splitting of valence and conduction bands. A band gap of 0.342eV in graphene and an infinitesimally small gap in other 2D materials are generated. Similar to a single layer, AA-stacked bilayer materials also exhibit excellent optical properties throughout the optical region from infrared to ultraviolet. Optical properties are studied along both parallel (||) and perpendicular ( ) polarization directions. The complex dielectric function (ε) and the complex refractive index (N) are calculated. The calculated values of ε and N enable us to analyze optical absorption, reflectivity, conductivity, and the electron loss function. Inferences from the study of optical properties are presented. In general the optical properties are found to be enhanced compared to its corresponding single layer. The further study brings out greater inferences towards their direct application in the optical industry through a wide range of the optical spectrum.


2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  

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