scholarly journals Multiple-quantum-flux penetration in a superconducting loop containing a Josephson junction: Temperature dependence

1987 ◽  
Vol 35 (4) ◽  
pp. 1659-1663 ◽  
Author(s):  
James A. Blackburn ◽  
H. J. T. Smith
Keyword(s):  
Temperature Dependence ◽  
Josephson Junction ◽  
Junction Temperature ◽  
Multiple Quantum ◽  
Flux Penetration ◽  
Quantum Flux ◽  
Superconducting Loop

scholarly journals Multiple quantum flux penetration in superconducting loops

1975 ◽  
Vol 12 (3) ◽  
pp. 940-942 ◽  
Author(s):  
H. J. T. Smith ◽  
J. A. Blackburn
Keyword(s):  
Multiple Quantum ◽  
Flux Penetration ◽  
Quantum Flux

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

"Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation

2020 ◽  
Vol 10 (1) ◽  
pp. 140-144
Author(s):  
Changfu Li ◽  
Mingsheng Xu ◽  
Ziwu Ji ◽  
Kaiju Shi ◽  
Hongbin Li ◽  
...  
Keyword(s):  
Phase Separation ◽  
Temperature Dependence ◽  
Multiple Quantum Well ◽  
Excitation Power ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Two Phase ◽  
Phase Structures ◽  
Temperature Dependences ◽  
Lower Excitation

The temperature dependence of the spectra of photoluminescence (PL) from a blue InGaN/GaN multiplequantum-well (MQW) structure is investigated at lower excitation power. Two emission peaks, related to InGaN and assigned to In-rich quasi-quantum dots (QDs) and InGaN-matrix in the full PL spectrum, were observed. Upon increasing the temperature, both PL peak linewidths exhibited "double-W-shaped" (narrowing–broadening–narrowing–broadening–narrowing–broadening) temperature dependence. Combined with the observed features of the temperature dependences of the PL intensities, the temperature-dependent behaviors in this case can be interpreted as the relaxation and thermalization of carriers inside respective phase structures and the transfer of carriers between two phase structures, because of the strong phase separation and significant component fluctuation in the InGaN well layers.

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