Theoretical study of the electronic structure of the incoherent {211} Σ=3 grain boundary in Ge by the recursion approach

1987 ◽  
Vol 35 (3) ◽  
pp. 1267-1272 ◽  
Author(s):  
A. Mauger ◽  
J. Bourgoin ◽  
G. Allan ◽  
M. Lannoo ◽  
A. Bourret ◽  
...  
2016 ◽  
Vol 18 (46) ◽  
pp. 31973-31974 ◽  
Author(s):  
Mariana Derzsi ◽  
Wojciech Grochala

The recent article by Hou et al. has focused on a theoretical study of mixed valence compound AgO in order to elucidate the nature of the electronic structure of this system as a function of external pressure.


2006 ◽  
Vol 253 (4) ◽  
pp. 1939-1945 ◽  
Author(s):  
S. Gesari ◽  
B. Irigoyen ◽  
A. Juan

2006 ◽  
Vol 800 (1-3) ◽  
pp. 62-68 ◽  
Author(s):  
Xiao-Qing Zeng ◽  
Mao-Fa Ge ◽  
Lin Du ◽  
Zheng Sun ◽  
Dian-Xun Wang

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