Effect of plasma waves on the optical properties of metal-insulator superlattices

1987 ◽  
Vol 35 (3) ◽  
pp. 1088-1098 ◽  
Author(s):  
W. Luis Mochán ◽  
Marcelo del CastilloMussot ◽  
Rubén G. Barrera ◽  
Apartado Postal 20-364 ◽  
01000 México ◽  
...  
2007 ◽  
Vol 49 (5) ◽  
pp. 894-899 ◽  
Author(s):  
A. A. Makhnev ◽  
L. V. Nomerovannaya ◽  
A. O. Tashlykov ◽  
S. N. Barilo ◽  
S. V. Shiryaev

2005 ◽  
Vol 98 (4) ◽  
pp. 043705 ◽  
Author(s):  
V. G. Kravets ◽  
L. V. Poperenko ◽  
I. V. Yurgelevych ◽  
A. M. Pogorily ◽  
A. F. Kravets

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Ueno ◽  
T. Ozaki ◽  
H. Koyama ◽  
N. Koshida

AbstractSome nonlinear electrical characteristics in electroluminescent porous silicon (PS) diodes with a relatively thin PS layer (0.5–5 μm thick) are described. The experimental PS diodes were composed of a semitransparent Au film, a PS layer, p- or n-type Si substrate, and an ohmic back contact. The PS layers were prepared by anodizing Si wafers in an ethanoic HF solution. In some cases, the PS layers were treated by rapid thermal oxidization (RTO) process. When the bias voltage is applied, the PS diodes show the electrical behavior like the metal-insulator-semiconductor (MIS) diodes. The negative-resistance characteristics and memory effect are also observed. These results indicate that the quantum-structured nature of the PS layer appears not only in the optical properties but also in the electrical properties.


2007 ◽  
Vol 74 (5) ◽  
pp. 368
Author(s):  
K. N. Afanas’ev ◽  
E. A. Bondar’ ◽  
M. V. Sedova ◽  
L. P. Shadrina

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