Total-energy local-density studies of theα-γphase transition in Ce

1986 ◽  
Vol 34 (1) ◽  
pp. 369-378 ◽  
Author(s):  
B. I. Min ◽  
H. J. F. Jansen ◽  
T. Oguchi ◽  
A. J. Freeman
Keyword(s):  
Total Energy ◽  
Local Density

Electronic Structure vs Phase in Al3V

1988 ◽  
Vol 141 ◽  
Author(s):  
J.-H. Xu
Keyword(s):  
Electronic Structure ◽  
Bulk Modulus ◽  
Total Energy ◽  
Crystal Structures ◽  
Lattice Constant ◽  
Density Of States ◽  
Phase Stability ◽  
Local Density ◽  
Young Modulus ◽  
Good Agreement

AbstractThe electronic structure of Al3V vs its two different crystal structures (DO22 and Ll2) were investigated using local density total energy approach. The calculated results of the total energy showed that in Al3V the tetragonal DO22 phase is energetically favored as compared to the cubic Ll2 phase, the total energy in the former case is about 60 mRy/F.U. lower than that in the later case. The calculated lattice constant (a=3.72 Å, c=8.20 Å) is in fairly good agreement with experiment (a=3.778 Å, c=8.326 Å),and the bulk modulus (1.3 Mbar) is comparable with the experimental Young modulus (150 GPa) for Al3Ti. Furthermore, it is interesting to note that the density of states at EF in the tetragonal DO22 phase (0.14 states/eV-F.U.) is about one order magnitude smaller than that in the Ll2 phase (2.89 states/eV-F.U.). The electronic structure of Al3V seems to be fairly satisfactory in explaining its phase stability.

First-Principles Geometry Optimization of Polysilane

1988 ◽  
Vol 141 ◽  
Author(s):  
John W. Mintmire
Keyword(s):  
Total Energy ◽  
First Principles ◽  
Density Functional ◽  
Local Density ◽  
Minimum Energy ◽  
Geometry Optimization ◽  
Functional Approach ◽  
Energy Structure ◽  
Atomic Orbitals ◽  
Local Density Functional

AbstractA first-principles approach is reviewed for calculating the total energy of chain polymers using a linear combination of atomic orbitals local-density functional approach. The geometry for the all-trans conformation of polysilane is optimized by finding the minimum energy structure using this method.

Structural, Electronic, and Magnetic Properties of Surfaces, Interfaces, and Superlattices

1985 ◽  
Vol 63 ◽  
Author(s):  
Arthur J. Freeman ◽  
C. L. Fu ◽  
T. Oguchi
Keyword(s):  
Total Energy ◽  
Density Functional ◽  
Local Density ◽  
Full Potential ◽  
Complex Materials ◽  
Functional Theory ◽  
Augmented Plane Wave ◽  
Local Density Functional Theory ◽  
Flapw Method ◽  
Linearized Augmented Plane Wave

ABSTRACTAdvances in all-electron local density functional theory approaches to complex materials structure and properties made possible by the implementation of new computational/theoretical algorithms on supercomputers are exemplified in our full potential linearized augmented plane wave (FLAPW) method. In this total energy self-consistent approach, high numerical stability and precision (to 10 in the total energy) have been demonstrated in a study of the relaxation and reconstruction of transition metal surfaces. Here we demonstrate the predictive power of this method for describing the structural, magnetic and electronic properties of several systems (surfaces, overlayers, sandwiches, and superlattices).

scholarly journals Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

1996 ◽  
Vol 1 ◽  
Author(s):  
J. A. Majewski ◽  
M. Städele ◽  
P. Vogl
Keyword(s):  
Electronic Structure ◽  
Total Energy ◽  
Valence Band ◽  
First Principles ◽  
Degrees Of Freedom ◽  
Local Density ◽  
Structural Parameters ◽  
Spin Orbit ◽  
Biaxial Strain ◽  
Valence Band State

We present first-principles studies of the effect of biaxial (0001)-strain on the electronic structure of wurtzite GaN, AlN, and InN. We provide accurate predictions for the valence band splittings as a function of strain which greatly facilitates the interpretation of data from samples with unintentional growth-induced strain. The present calculations are based on the total-energy pseudopotential method within the local-density formalism and include the spin-orbit interaction nonperturbatively. For a given biaxial strain, all structural parameters are determined by minimization of the total energy with respect to the electronic and ionic degrees of freedom. Our calculations predict that the valence band state Γ9(Γ6) lies energetically above the Γ7(Γ1) states in GaN and InN, in contrast to the situation in AlN. In all three nitrides, we find that the ordering of these two levels becomes reversed for some value of biaxial strain. In GaN, this crossing takes place already at 0.32% tensile strain. For larger tensile strains, the top of the valence band becomes well separated from the lower states. The computed crystal-field and spin-orbit splittings in unstrained materials as well as the computed deformation potentials agree well with the available experimental data.

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