Electron-nuclear double-resonance experiments in hydrogenated amorphous silicon

1986 ◽  
Vol 34 (5) ◽  
pp. 3093-3107 ◽  
Author(s):  
M. Stutzmann ◽  
D. K. Biegelsen
Keyword(s):  
Amorphous Silicon ◽  
Double Resonance ◽  
Hydrogenated Amorphous Silicon ◽  
Electron Nuclear Double Resonance ◽  
Hydrogenated Amorphous

Pulsed Esr Study of Light-Induced Metastable Defects in 17O and 13C Incorporated a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Yamasaki ◽  
T. Umeda ◽  
J. Isoya ◽  
A. Matsuda ◽  
K. Tanaka
Keyword(s):  
Electron Spin ◽  
Spin Echo ◽  
Double Resonance ◽  
Electron Spin Echo ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bonds ◽  
Electron Nuclear Double Resonance ◽  
Spin Resonance ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon (a-Si:H) samples containing 17O (3 x 1019 cm-3, nuclear spin, I, = 5/2) and 13C (3 - 4 x 1017cm-3, I = 1/2) isotope impurities were used in the detailed pulsed electron spin resonance (ESR) and pulsed electron-nuclear double resonance (ENDOR) measurements to obtain information on the role of O and C impurities in lightinduced metastable dangling bonds in a-Si:H. No hyperfine structure related to 17O and 13C atoms was observed in echo detected ESR, electron spin echo envelope modulation (ESEEM) of pulsed ESR as well as pulsed ENDOR (Davies and Mims sequences), which suggests that O and C impurities are not directly involved in the formation of light-induced dangling bonds.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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