Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam

1986 ◽  
Vol 34 (4) ◽  
pp. 2407-2415 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
D. N. Mashburn ◽  
R. F. Wood
Keyword(s):  
Laser Heating ◽  
Time Resolved ◽  
Krf Laser ◽  
Silicon And Germanium ◽  
Heating Beam

Time-Resolved IR Video Imaging with Synchronized Scanned Laser Heating

1988 ◽  
pp. 496-499 ◽  
Author(s):  
P. K. Kuo ◽  
I. C. Oppenheim ◽  
L. D. Favro ◽  
Z. J. Feng ◽  
R. L. Thomas ◽  
...  
Keyword(s):  
Laser Heating ◽  
Time Resolved ◽  
Video Imaging

Time-Resolved Reflectivity Measurements of Silicon And Germanium Using A Pulsed Excimer Laser

1985 ◽  
Vol 51 ◽  
Author(s):  
G. E. Jellison ◽  
D. H. Lowndes ◽  
D. N. Mashburn ◽  
R. F. Wood
Keyword(s):  
Excimer Laser ◽  
Surface Region ◽  
Finite Energy ◽  
Time Resolved ◽  
Model Calculations ◽  
Near Surface ◽  
Maximum Reflectivity ◽  
Liquid Phases ◽  
Silicon And Germanium ◽  
Melt Duration

ABSTRACTTime-resolved reflectivity measurements of silicon and germanium have been made during pulsed KrF excimer laser irradiation. The reflectivity was measured simultaneously at both 1152 and 632.8 nm wavelengths, and the energy density of each laser pulse was monitored. The melt duration and the time of the onset of melting were measured and compared with the results of melting model calculations. For energy densities just above the melting threshold, it was found that the melt duration was never less than 20 ns for Si and 25 ns for Ge, while the maximum reflectivity increased from the value of the hot solid to that of the liquid over a finite energy range. These results, along with a reinterpretation of earlier time-resolved ellipsometry measurements, indicate that, during the melt-in process, the near-surface region does not melt homogeneously, but rather consists of a mixture of solid and liquid phases. The reflectivity at the onset of melting and in the liquid phase have been measured at both 632.8 and 1152 nm, and are compared with the results found in the literature.

Time-resolved interferometric investigations of the KrF-laser-induced interaction zone

1997 ◽  
Vol 109-110 ◽  
pp. 493-497 ◽  
Author(s):  
H Schittenhelm ◽  
G Callies ◽  
P Berger ◽  
H Hügel
Keyword(s):  
Interaction Zone ◽  
Time Resolved ◽  
Krf Laser

Structural change of CO adsorbed on Pt(111) by laser heating: time-resolved sum-frequency generation study

2003 ◽  
Vol 377 (5-6) ◽  
pp. 601-606 ◽  
Author(s):  
Satoshi Katano ◽  
Shinsaku Dobashi ◽  
Jun Kubota ◽  
Ken Onda ◽  
Akihide Wada ◽  
...  
Keyword(s):  
Structural Change ◽  
Laser Heating ◽  
Heating Time ◽  
Sum Frequency Generation ◽  
Time Resolved ◽  
Sum Frequency ◽  
Frequency Generation

Time-resolved ultraviolet–visible absorption spectroscopic study on femtosecond KrF laser ablation of liquid benzyl chloride

1999 ◽  
Vol 300 (5-6) ◽  
pp. 727-733 ◽  
Author(s):  
Koji Hatanaka ◽  
Tamitake Itoh ◽  
Tsuyoshi Asahi ◽  
Nobuyuki Ichinose ◽  
Shunichi Kawanishi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Spectroscopic Study ◽  
Benzyl Chloride ◽  
Visible Absorption ◽  
Time Resolved ◽  
Krf Laser

Effects of Impurities on the Competition between Solid Phase Epitaxy and Random Crystallization In Ion-Implanted Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson ◽  
J.A. Roth ◽  
Y. Rytz-Froidevaux ◽  
J. Narayan
Keyword(s):  
Laser Heating ◽  
Crystallization Process ◽  
Solid Phase ◽  
Crystallization Rate ◽  
Solid Phase Epitaxy ◽  
Temperature Dependent ◽  
Kinetics Parameters ◽  
Time Resolved ◽  
Cw Laser ◽  
Ion Implanted

ABSTRACTThe temperature dependent competition between solid phase epitaxy and random crystallization in ion-implanted (As+, B+, F+, and BF2+) silicon films is investigated. Measurements of time-resolved reflectivity during cw laser heating show that in the As+, F+, and BF2+-implanted layers (conc 4×1020cm-3) epitaxial growth is disrupted at temperatures 1000°C. This effect is not observed in intrinsic films or in the B+-implanted layers. Correlation with results of microstructural analyses and computer simulation of the reflectivity experiment indicates that disruption of epitaxy is caused by enhancement of the random crystallization rate by arsenic and fluorine. Kinetics parameters for the enhanced crystallization process are determined; results are interpreted in terms of impurity-catalyzed nucleation during the random crystallization process.

scholarly journals In situ tracking of defect healing and purification of single-wall carbon nanotubes with laser radiation by time-resolved Raman spectroscopy

RSC Advances ◽  
2015 ◽  
Vol 5 (76) ◽  
pp. 62149-62159 ◽  
Author(s):  
N. Souza ◽  
M. Zeiger ◽  
V. Presser ◽  
F. Mücklich
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Laser Radiation ◽  
Laser Heating ◽  
Single Wall Carbon Nanotubes ◽  
Composite Processing ◽  
Time Resolved ◽  
Single Wall Carbon ◽  
Defect Healing

Fine-tuned localised laser heating of pristine or mechanically dispersed (for composite processing) SWCNTs resulting in precision healing and purification.

Phase Transitions in the Picosecond Time Domain

1986 ◽  
Vol 77 ◽  
Author(s):  
Hani E. Elsayed-Ali ◽  
Gerard A. Mourou
Keyword(s):  
Laser Heating ◽  
Lattice Relaxation ◽  
Nonequilibrium State ◽  
Metal Films ◽  
Ultrafast Laser ◽  
Femtosecond Laser Irradiation ◽  
Lattice Temperature ◽  
Physical Processes ◽  
Time Resolved ◽  
Temperature Electron

ABSTRACTThe physical processes occurring during the initial stages of ultrafast laser heating of metals are described. Femtosecond laser irradiation is used to create nonequilibrium heating in metals. In such a nonequilibrium state, the electron temperature can be heated up to a few thousand degrees above the lattice temperature. Electron-lattice relaxation is time-resolved in copper and found to be 1 – 4 ps depending on the laser heating ffuence. The technique of time-resolved electron diffraction (a lattice structural and temperature probe) is described. Utilization of this technique for lattice temperature measurement of thin metal films is demonstrated.

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