Optical cross sections associated with deep-level impurities in semiconductors

1986 ◽  
Vol 33 (12) ◽  
pp. 8595-8601 ◽  
Author(s):  
J. Petit ◽  
G. Allan ◽  
M. Lannoo
Keyword(s):  
Cross Sections ◽  
Deep Level ◽  
Impurities In Semiconductors

scholarly journals Absolute Photoionization Cross Sections of the Acceptor State Level of Chromium in Indium Phosphide

1985 ◽  
Vol 46 ◽  
Author(s):  
Georges Bremond ◽  
G. Guillot ◽  
A. Nouailhat ◽  
G. Picoli
Keyword(s):  
Indium Phosphide ◽  
Conduction Band ◽  
Cross Section ◽  
Cross Sections ◽  
Selection Rule ◽  
Deep Level ◽  
State Level ◽  
Acceptor State ◽  
Internal Transition ◽  
Resonant Character

AbstractWe have analyzed the photoionization of Cr2+ in InP by the Deep Level Optical Spectroscopy (D.L.O.S.). The σ°n cross section exhibits both a resonant and non resonant character. The former corresponds to the internal transition 5T2-5E of Cr2+ while the threshold of the second allows us to locate the Cr2+/Cr3+ level below the conduction band. The absolute photoionization cross sections towards the two bands are very similar. In particular no selection rule seems to work.

Meyer-Neldel Rule in Deep-Level-Transient-Spectroscopy and its Ramifications

2003 ◽  
Vol 763 ◽  
Author(s):  
Richard S. Crandall
Keyword(s):  
Cross Section ◽  
Cross Sections ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capture Cross ◽  
Emission Data ◽  
The Cross ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractThis paper presents data showing a Meyer-Neldel rule (MNR) in InGaAsN alloys. It is shown that without this knowledge, significant errors will be made using Deep-Level Transient-Spectroscopy (DLTS) emission data to determine capture cross sections. By correctly accounting for the MNR in analyzing the DLTS data the correct value of the cross section is obtained.

Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors

1994 ◽  
Vol 373 ◽  
Author(s):  
A. Castaldini ◽  
A. Cavallini ◽  
C. Del Papa ◽  
G. Fuochi ◽  
M. Alietti ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Gamma Rays ◽  
Cross Sections ◽  
Deep Level ◽  
Charge Particle ◽  
Particle Detectors ◽  
Energy Capture ◽  
Γ Rays ◽  
Transient Spectroscopy ◽  
Different Doses

AbstractSemi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.

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