Metastable changes of the electronic spin-lattice relaxation time in hydrogenated amorphous silicon

1986 ◽  
Vol 33 (10) ◽  
pp. 7379-7382 ◽  
Author(s):  
Martin Stutzmann
1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5470-5473
Author(s):  
Wei-Chi Lai ◽  
Chun-Yen Chang ◽  
Meiso Yokoyama ◽  
Jen-Dar Guo ◽  
Jian-Shihn Tsang ◽  
...  

1977 ◽  
Vol 22 (4) ◽  
pp. 251-255 ◽  
Author(s):  
G. Berthet ◽  
J.P. Blanc ◽  
J. Gallice ◽  
H. Robert ◽  
C. Thibaud ◽  
...  

1999 ◽  
Vol 557 ◽  
Author(s):  
Tining Su ◽  
P.C. Taylor ◽  
Shenlin Chen ◽  
R.S. Crandall ◽  
A.H. Mahan

AbstractA Jeener-Broekaert three-pulse sequence is used to investigate ortho-molecular hydrogen (o-H2) in device quality amorphous silicon films prepared by plasma enhanced chemical vapor deposition (PECVD) and hot wire CVD (HWCVD). For the PECVD sample, the concentration of hydrogen molecules is ~ 11% of the total hydrogen concentration, one order of magnitude larger than that inferred from spin-lattice relaxation time measurements (~1%). Hence, most of the hydrogen molecules do not serve as effective relaxation centers. For HWCVD samples with ~3 to 4% hydrogen and very low void densities, the concentrations of hydrogen molecules are ~1% of the total hydrogen concentration. In these samples, spin-lattice relaxation measurements for bonded hydrogen indicate that the concentration of hydrogen molecules that contribute to spin-lattice relaxation is at most 0.1% of the total hydrogen concentration. Spin-lattice relaxation time (T1) measurements of ortho-molecular hydrogen indicate two very different T1's. The longer T1 is ~ 0.6 s, possibly due to an electric quadrupole-quadrupole (EQQ) interaction between o-H2 molecules and, the shorter T1 is ~ 3 ms, very close to that calculated for a two-phonon Raman process for rotating o-H2.


1978 ◽  
Vol 39 (C6) ◽  
pp. C6-1215-C6-1216
Author(s):  
H. Ahola ◽  
G.J. Ehnholm ◽  
S.T. Islander ◽  
B. Rantala

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