Resonant carrier capture by semiconductor quantum wells

1986 ◽  
Vol 33 (2) ◽  
pp. 1420-1423 ◽  
Author(s):  
J. A. Brum ◽  
G. Bastard
Keyword(s):  
Quantum Wells ◽  
Carrier Capture ◽  
Semiconductor Quantum Wells

CARRIER CAPTURE IN SEMICONDUCTOR QUANTUM WELL LASERS: A QUANTUM TRANSPORT ANALYSIS

1998 ◽  
Vol 09 (04) ◽  
pp. 1211-1233 ◽  
Author(s):  
LEONARD F. REGISTER
Keyword(s):  
Wave Function ◽  
Quantum Wells ◽  
Quantum Transport ◽  
Golden Rule ◽  
Carrier Wave ◽  
Carrier Capture ◽  
The Past ◽  
Semiconductor Quantum Wells ◽  
Semiconductor Quantum Well ◽  
Transport Analysis

A quantum transport-based analysis of the essential physics of carrier capture in semiconductor quantum wells is presented. First, the past progression of models of carrier capture by quantum wells is briefly reviewed. Then carrier capture is modeled using the Schrödinger Equation Monte Carlo (SEMC) quantum transport simulator. In addition to reproducing familiar effects, these simulations exhibit significant effects associated with partial phase-coherence of the carrier wave-function across the well which cannot be modeled via classical or perturbative Golden Rule calculations, and address fundamental transport limitations often overlooked in Golden Rule calculations. However, this analysis also points to simple changes that could significantly improve, although not perfect, the treatment of carrier capture via these latter more conventional approaches.

Microcavities

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Quantum Wells ◽  
Strong Light ◽  
Fundamental Physics ◽  
Postgraduate Students ◽  
Optical Cavities ◽  
Semiconductor Quantum Wells ◽  
Exciton Polaritons ◽  
Different Types ◽  
Potential Applications ◽  
Experimental Findings

Both rich fundamental physics of microcavities and their intriguing potential applications are addressed in this book, oriented to undergraduate and postgraduate students as well as to physicists and engineers. We describe the essential steps of development of the physics of microcavities in their chronological order. We show how different types of structures combining optical and electronic confinement have come into play and were used to realize first weak and later strong light–matter coupling regimes. We discuss photonic crystals, microspheres, pillars and other types of artificial optical cavities with embedded semiconductor quantum wells, wires and dots. We present the most striking experimental findings of the recent two decades in the optics of semiconductor quantum structures. We address the fundamental physics and applications of superposition light-matter quasiparticles: exciton-polaritons and describe the most essential phenomena of modern Polaritonics: Physics of the Liquid Light. The book is intended as a working manual for advanced or graduate students and new researchers in the field.

Lateral-superlattice effects in very narrow strained semiconductor quantum wells grown on vicinal surfaces

1993 ◽  
Vol 47 (20) ◽  
pp. 13880-13883 ◽  
Author(s):  
F. Meseguer ◽  
F. Agulló-Rueda ◽  
C. López ◽  
J. Sánchez-Dehesa ◽  
J. Massies ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vicinal Surfaces ◽  
Semiconductor Quantum Wells

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

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