Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence

Joachim Wagner

doi:10.1103/physrevb.32.1323

Band-gap narrowing in heavily doped silicon at 20 and 300 K studied by photoluminescence

Physical Review B ◽

10.1103/physrevb.32.1323 ◽

1985 ◽

Vol 32 (2) ◽

pp. 1323-1325 ◽

Cited By ~ 64

Author(s):

Joachim Wagner

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Measurements of band gap narrowing in heavily doped epitaxial emitters and the modeling of heavily doped silicon

10.1109/iedm.1980.189812 ◽

1980 ◽

Author(s):

G.E. Possin ◽

M.S. Adler ◽

B.J. Baliga

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Band gap narrowing in heavily doped silicon

Solid-State Electronics ◽

10.1016/0038-1101(82)90180-0 ◽

1982 ◽

Vol 25 (9) ◽

pp. 909-911 ◽

Cited By ~ 17

Author(s):

S.R. Dhariwal ◽

V.N. Ojha

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Electrical band-gap narrowing in - and heavily doped silicon at 300K

Microelectronics Reliability ◽

10.1016/0026-2714(87)90119-3 ◽

1987 ◽

Vol 27 (4) ◽

pp. 790

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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The effect of impurity concentration dependent static dielectric constant on band-gap narrowing in heavily doped silicon

phys stat sol (a) ◽

10.1002/pssa.2211480226 ◽

1995 ◽

Vol 148 (2) ◽

pp. 575-584 ◽

Cited By ~ 6

Author(s):

S. D. Ristić ◽

Z. D. Prijić ◽

S. Ž. Mijalković

Keyword(s):

Dielectric Constant ◽

Band Gap ◽

Impurity Concentration ◽

Static Dielectric Constant ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Band‐gap narrowing in heavily doped silicon: A comparison of optical and electrical data

Journal of Applied Physics ◽

10.1063/1.340257 ◽

1988 ◽

Vol 63 (2) ◽

pp. 425-429 ◽

Cited By ~ 123

Author(s):

Joachim Wagner ◽

Jesús A. del Alamo

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing ◽

Electrical Data

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Statistical comparisons of data on band‐gap narrowing in heavily doped silicon: Electrical and optical measurements

Journal of Applied Physics ◽

10.1063/1.332950 ◽

1984 ◽

Vol 55 (10) ◽

pp. 3582-3587 ◽

Cited By ~ 47

Author(s):

Herbert S. Bennett ◽

Charles L. Wilson

Keyword(s):

Band Gap ◽

Optical Measurements ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Electrical band-gap narrowing in n- and p-type heavily doped silicon at 300 K

Solid-State Electronics ◽

10.1016/0038-1101(86)90003-1 ◽

1986 ◽

Vol 29 (9) ◽

pp. 857-860 ◽

Cited By ~ 2

Author(s):

H. Van Cong ◽

S. Brunet

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing ◽

P Type

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Band-gap narrowing in the space-charge region of heavily doped silicon diodes

Solid-State Electronics ◽

10.1016/0038-1101(85)90229-1 ◽

1985 ◽

Vol 28 (1-2) ◽

pp. 187-191 ◽

Cited By ~ 24

Author(s):

Jeremiah R. Lowney

Keyword(s):

Space Charge ◽

Band Gap ◽

Space Charge Region ◽

Doped Silicon ◽

Heavily Doped ◽

Band Gap Narrowing

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Band-Gap Narrowing in n-Type Moderately Doped Silicon at 300 K

physica status solidi (b) ◽

10.1002/pssb.2221170218 ◽

1983 ◽

Vol 117 (2) ◽

pp. 575-584 ◽

Cited By ~ 8

Author(s):

H. Vancong

Keyword(s):

Band Gap ◽

Doped Silicon ◽

Band Gap Narrowing

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A performed model for band-gap narrowing of heavily doped semiconductors

Solid State Communications ◽

10.1016/0038-1098(82)91112-7 ◽

1982 ◽

Vol 44 (8) ◽

pp. 1313-1315 ◽

Cited By ~ 11

Author(s):

H. Van Cong ◽

S. Charar ◽

S. Brunet

Keyword(s):

Band Gap ◽

Doped Semiconductors ◽

Heavily Doped ◽

Band Gap Narrowing

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