k→⋅p→theory, effective-mass approach, and spin splitting for two-dimensional electrons in GaAs-GaAlAs heterostructures

1985 ◽  
Vol 31 (12) ◽  
pp. 8076-8086 ◽  
Author(s):  
R. Lassnig
1990 ◽  
Vol 59 (7) ◽  
pp. 2324-2327 ◽  
Author(s):  
Madoka Tokumoto ◽  
A. G. Swanson ◽  
J. S. Brooks ◽  
C. C. Agosta ◽  
S. T. Hannahs ◽  
...  

2017 ◽  
Vol 122 (15) ◽  
pp. 153905 ◽  
Author(s):  
Moh. Adhib Ulil Absor ◽  
Iman Santoso ◽  
Harsojo ◽  
Kamsul Abraha ◽  
Hiroki Kotaka ◽  
...  

2000 ◽  
Vol 76 (24) ◽  
pp. 3600-3602 ◽  
Author(s):  
Amlan Majumdar ◽  
L. P. Rokhinson ◽  
D. C. Tsui ◽  
L. N. Pfeiffer ◽  
K. W. West

2014 ◽  
Vol 2 (40) ◽  
pp. 8539-8545 ◽  
Author(s):  
Yandong Ma ◽  
Ying Dai ◽  
Na Yin ◽  
Tao Jing ◽  
Baibiao Huang

Nano Letters ◽  
2012 ◽  
Vol 13 (1) ◽  
pp. 148-152 ◽  
Author(s):  
A. Srinivasan ◽  
L. A. Yeoh ◽  
O. Klochan ◽  
T. P. Martin ◽  
J. C. H. Chen ◽  
...  

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 489-493
Author(s):  
H. Kosina ◽  
C. Troger

Nonparabolicity effects in two-dimensional electron systems are quantitatively analyzed. A formalism has been developed which allows to incorporate a nonparabolic bulk dispersion relation into the Schrödinger equation. As a consequence of nonparabolicity the wave functions depend on the in-plane momentum. Each subband is parametrized by its energy, effective mass and a subband nonparabolicity coefficient. The formalism is implemented in a one-dimensional Schrödinger-Poisson solver which is applicable both to silicon inversion layers and heterostructures.


Sign in / Sign up

Export Citation Format

Share Document