Bond lengths and coordination numbers fromL2,3-edge versusK-edge surface extended x-ray-absorption fine structure

1985 ◽  
Vol 31 (2) ◽  
pp. 700-721 ◽  
Author(s):  
P. H. Citrin
1986 ◽  
Vol 25 (Part 1, No. 2) ◽  
pp. 231-233 ◽  
Author(s):  
Toru Sasaki ◽  
Tomohiro Onda ◽  
Ryoichi Ito ◽  
Nagaatsu Ogasawara

1994 ◽  
Vol 375 ◽  
Author(s):  
S. Schuppler ◽  
S. L. Friedman ◽  
M. A. Marcus ◽  
D. L. Adler ◽  
Y.-H. Xie ◽  
...  

AbstractQuantum confinement in nanoscale Si structures is widely believed to be responsible for the visible luminescence observed from anodically etched porous silicon (por-Si), but little is known about the actual size or shape of these structures. Extended x-ray absorption fine structure data from a wide variety of por-Si samples show significantly reduced average Si coordination numbers due to the sizable contribution of surface-coordinated H. (The H/Si ratios, as large as 1.2, were independently confirmed by ir-absorption and α-recoil measurements.) The Si coordinations imply very large surface/volume ratios, enabling the average Si structures to be identified as crystalline particles (not wires) whose dimensions are typically <15 Å. Comparison of the size-dependent peak luminescence energies with those of oxidized Si nanocrystals, whose shapes are known, shows remarkable agreement. Furthermore, near-edge x-ray absorption fine structure measurements of the nanocrystals shows the outer oxide and interfacial suboxide layers to be constant over a wide range of nanocrystal sizes. The combination of these results effectively rules out surface species as being responsible for the observed visible luminescence in por-Si, and strongly supports quantum confinement as the dominant mechanism occurring in Si particles which are substantially smaller than previously reported or proposed.


1983 ◽  
Vol 51 (26) ◽  
pp. 2414-2417 ◽  
Author(s):  
J. Stöhr ◽  
J. L. Gland ◽  
W. Eberhardt ◽  
D. Outka ◽  
R. J. Madix ◽  
...  

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