Effect of temperature-dependent energy-level shifts on a semiconductor's Peltier heat

1984 ◽  
Vol 30 (10) ◽  
pp. 5766-5770 ◽  
Author(s):  
David Emin
Keyword(s):  
Energy Level ◽  
Effect Of Temperature ◽  
Temperature Dependent ◽  
Level Shifts

scholarly journals Temperature-Dependent Energy-Level Shifts of Spin Defects in Hexagonal Boron Nitride

ACS Photonics ◽  
2021 ◽  
Author(s):  
Wei Liu ◽  
Zhi-Peng Li ◽  
Yuan-Ze Yang ◽  
Shang Yu ◽  
Yu Meng ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Energy Level ◽  
Hexagonal Boron Nitride ◽  
Temperature Dependent ◽  
Level Shifts

Temperature dependent energy level shifts of nitrogen-vacancy centers in diamond

2011 ◽  
Vol 99 (16) ◽  
pp. 161903 ◽  
Author(s):  
X.-D. Chen ◽  
C.-H. Dong ◽  
F.-W. Sun ◽  
C.-L. Zou ◽  
J.-M. Cui ◽  
...  
Keyword(s):  
Energy Level ◽  
Nitrogen Vacancy ◽  
Temperature Dependent ◽  
Nitrogen Vacancy Centers ◽  
Level Shifts

The effect of temperature-dependent thermal parameters in thermal models of subduction zones

2021 ◽  
Author(s):  
Iris van Zelst ◽  
Timothy J. Craig ◽  
Cedric Thieulot
Keyword(s):  
Subduction Zones ◽  
Thermal Parameters ◽  
Dislocation Creep ◽  
Seismogenic Zone ◽  
Effect Of Temperature ◽  
Temperature Dependent ◽  
Thermal Models ◽  
Intermediate Depth ◽  
Dehydration Reactions ◽  
Model Setup

<p>The thermal structure of subduction zones plays an important role in the seismicity that occurs there with e.g., the downdip limit of the seismogenic zone associated with particular isotherms (350 °C - 450 °C) and intermediate-depth seismicity linked to dehydration reactions that occur at specific temperatures and pressures. Therefore, accurate thermal models of subduction zones that include the complexities found in laboratory studies are necessary. One of the often-ignored effects in models is the temperature-dependence of the thermal parameters such as the thermal conductivity, heat capacity, and density.<span> </span></p><p>Here, we build upon the model setup presented by Van Keken et al., 2008 by including temperature-dependent thermal parameters to an otherwise clearly constrained, simple model setup of a subducting plate. We consider a fixed kinematic slab dipping at 45° and a stationary overriding plate with a dynamic mantle wedge. Such a simple setup allows us to isolate the effect of temperature-dependent thermal parameters. We add a more complex plate cooling model for the oceanic plate for consistency with the thermal parameters.<span> </span></p><p>We test the effect of temperature-dependent thermal parameters on models with different rheologies, such as an isoviscous wedge, diffusion and dislocation creep. We find that slab temperatures can change by up to 65 °C which affects the location of isotherm depths. The downdip limit of the seismogenic zone defined by e.g., the 350 °C isotherm shifts by approximately 4 km, thereby increasing the maximum possible rupture area of the seismogenic zone. Similarly, the 600 °C isotherm is shifted approximately 30 km deeper, affecting the depth at which dehydration reactions and hence intermediate-depth seismicity occurs. Our results therefore show that temperature-dependent thermal parameters in thermal models of subduction zones cannot be ignored when studying subduction-related seismicity.<span> </span></p>

The Effect of Temperature Dependent Yield Strength on Upper Bounds for Creep Ratcheting

2006 ◽  
Author(s):  
Timothy E. McGreevy ◽  
Frederick A. Leckie ◽  
Peter Carter ◽  
Douglas L. Marriott
Keyword(s):  
Yield Strength ◽  
Upper Bounds ◽  
Effect Of Temperature ◽  
Strain Accumulation ◽  
Core Concept ◽  
Temperature Dependent ◽  
Inelastic Analysis ◽  
Asme Code ◽  
Inelastic Design ◽  
Very High

The Bree model and the elastic core concept have been used as the foundation for the simplified inelastic design analysis methods in the ASME Code for the design of components at elevated temperature for nearly three decades. The methodology provides upper bounds for creep strain accumulation and a physical basis for ascertaining if a structure under primary and secondary loading will behave elastically, plastically, shakedown, or ratchet. Comparisons of the method with inelastic analysis results have demonstrated its conservatism in stainless steel at temperatures representative of those in LMBR applications. The upper bounds on creep accumulation are revisited for very high temperatures representative of VHTR applications, where the yield strength of the material is strongly dependent upon temperature. The effect of the variation in yield strength on the evolution of the core stress is illustrated, and is shown to extend the shakedown regions, and affects the location of the boundaries between shakedown, ratcheting, and plasticity.

scholarly journals DFT calculation for the electronic properties and quantum capacitance of pure and doped Zr2CO2 as electrode of supercapacitors

2021 ◽  
Author(s):  
Shuo Xu ◽  
Shi-Jie Wang ◽  
Li Xiao-Hong ◽  
Hong-Ling Cui
Keyword(s):  
Electronic Properties ◽  
Electrode Materials ◽  
Chemical Properties ◽  
Effect Of Temperature ◽  
Quantum Capacitance ◽  
Substitutional Site ◽  
Level Shifts ◽  
Dirac Distribution ◽  
Increasing Temperature ◽  
Physical And Chemical

Defect and doping are effective methods to modulate the physical and chemical properties of materials. In this report, we investigated the structural stability, electronic properties and quantum capacitance (Cdiff) of Zr2CO2 by changing the dopants of Si, Ge, Sn, N, B, S and F in the substitutional site. The doping of F, N, and S atoms makes the system undergo the semiconductor-to-conductor transition, while the doping of Si, Ge, and Sn maintains the semiconductor characteristics. The Cdiff of the doped systems are further explored. The B-doped system can be used as cathode materials, while the systems doped by S, F, N, Sn atoms are promising anode materials of asymmetric supercapacitors, especially for the S-doped system. The improved Cdiff mainly originates from Fermi-level shifts and Fermi-Dirac distribution by the introduction of the dopant. The effect of temperature on Cdiff is further explored. The result indicates that the maximum Cdiff of the studied systems gradually decreases with the increasing temperature. Our investigation can provide useful theoretical basis for designing and developing the ideal electrode materials for supercapacitors.

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