Weak-localization, spin-orbit, and electron-electron interaction effects in two- and three-dimensional bismuth films

1983 ◽  
Vol 28 (12) ◽  
pp. 6821-6832 ◽  
Author(s):  
D. S. McLachlan
Keyword(s):  
Three Dimensional ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction ◽  
Spin Orbit ◽  
Bismuth Films

Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films

2014 ◽  
Vol 551 ◽  
pp. 195-199 ◽  
Author(s):  
Bunju Shinozaki ◽  
Kazuya Hidaka ◽  
Syouhei Ezaki ◽  
Kazumasa Makise ◽  
Takayuki Asano ◽  
...  
Keyword(s):  
Oxide Films ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction

Weak Localization and Electron–Electron Interaction Effects in Indium Zinc Oxide Films

2007 ◽  
Vol 76 (7) ◽  
pp. 074718 ◽  
Author(s):  
Bunju Shinozaki ◽  
Kazumasa Makise ◽  
Yukio Shimane ◽  
Hiroaki Nakamura ◽  
Kazuyoshi Inoue
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide

scholarly journals Interplay of spin–orbit coupling and Coulomb interaction in ZnO-based electron system

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
D. Maryenko ◽  
M. Kawamura ◽  
A. Ernst ◽  
V. K. Dugaev ◽  
E. Ya. Sherman ◽  
...  
Keyword(s):  
Coulomb Interaction ◽  
High Mobility ◽  
Electron System ◽  
Orbit Coupling ◽  
Electron Interaction ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Strong Electron ◽  
Strongly Coupled ◽  
Dimensional Electron System

AbstractSpin–orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron–electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron–electron interactions can modify this coupling. Here we demonstrate the emergence of the SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system also features strong electron–electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron–electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regimes and to the formation of quasiparticles with the electron spin strongly coupled to the density.

scholarly journals SPECTRAL CORRELATIONS IN DISORDERED MESOSCOPIC METALS AND THEIR RELEVANCE FOR PERSISTENT CURRENTS

1996 ◽  
Vol 10 (28) ◽  
pp. 1397-1406 ◽  
Author(s):  
AXEL VÖLKER ◽  
PETER KOPIETZ
Keyword(s):  
Energy Levels ◽  
Three Dimensional ◽  
Average Density ◽  
Electron Interaction ◽  
Energy Window ◽  
Persistent Currents ◽  
Dependent Part ◽  
The Difference ◽  
Aharonov Bohm ◽  
Grand Canonical

We use the Lanczos method to calculate the variance σ2(E, ϕ) of the number of energy levels in an energy window of width E below the Fermi energy for noninteracting disordered electrons on a thin three-dimensional ring threaded by an Aharonov–Bohm flux ϕ. We confirm numerically that for small E the flux-dependent part of σ2(E, ϕ) is well described by the Altshuler–Shklovskii-diagram involving two Cooperons. However, in the absence of electron–electron interactions this result cannot be extrapolated to energies E where the energy-dependence of the average density of states becomes significant. We discuss consequences for persistent currents and argue that for the calculation of the difference between the canonical- and grand canonical current it is crucial to take the electron–electron interaction into account.

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