Spin-density calculations for core-electron photoemission and Auger electron line shapes, x-ray-edge exponents, and solid-state shifts

1983 ◽  
Vol 28 (6) ◽  
pp. 3182-3192 ◽  
Author(s):  
Tapio T. Rantala
Keyword(s):  
Solid State ◽  
Spin Density ◽  
Auger Electron ◽  
Core Electron ◽  
X Ray ◽  
Line Shapes ◽  
Electron Line ◽  
Electron Photoemission

Core-electron line shapes in x-ray photoemission spectra from semimetals and semiconductors

1977 ◽  
Vol 16 (6) ◽  
pp. 2613-2617 ◽  
Author(s):  
G. K. Wertheim ◽  
D. N. E. Buchanan
Keyword(s):  
Core Electron ◽  
X Ray ◽  
Line Shapes ◽  
Electron Line

STUDY OF SELENIUM DOPED Bi-BASED SUPERCONDUCTORS BY AES AND SEM

2001 ◽  
Vol 15 (22) ◽  
pp. 973-980
Author(s):  
S. A. SIDDIQI ◽  
AFFIA ASLAM ◽  
S. NASEEM
Keyword(s):  
Solid State ◽  
Auger Electron ◽  
Microstructural Analysis ◽  
Diffraction Method ◽  
Selenium Concentration ◽  
Solid State Reaction Method ◽  
Superconducting Transition ◽  
Reaction Method ◽  
X Ray ◽  
Scanning Electron

Compositions in Bi 2 Sr 2 Ca 2 Cu 3 O y: Se x with x = 0, 0.05, 0.1, 0.2, 0.3, 0.4 have been prepared by the solid state reaction method. The samples have initially been studied by the X-ray powder diffraction method for structural characterization. Superconducting transition temperatures (T c ) measured by the four probe technique shows dependence on selenium concentration. A detailed microstructural analysis has been carried out by scanning electron and Auger electron spectroscopies in order to investigate the incorporation of selenium in the grains of the superconductors. It is found that Se concentration affects both the T c values and the morphology of the grains. AES studies clearly show the presence of selenium in the grains of the superconductor.

Solid-State Reactions of a 3D-Transition Metal-Ti/Al2O3 System

1993 ◽  
Vol 318 ◽  
Author(s):  
Seiichi Suenaga ◽  
Miho Koyama ◽  
Shinji Arai ◽  
Masako Nakahashi
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Transition Metal ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Intermediate Phase ◽  
Solid State Reactions ◽  
Bilayer Film ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTAn interfacial mechanism for reactions between a Me-Ti thin film (Me=3d transition metals; Cu,Ni) and an A12O3 substrate is newly proposed. It has been clarified that Me3Ti3O (diamond cubic of Fd3m), which is formed as an intermediate phase in both the Cu-Ti/Al2O3 and Ni-Ti/Al2O3 systems, is responsible for the bonding between Me and A12O3. The solid-state reactions of the Me-Ti bilayer film/Al2O3 system were studied with Auger electron spectroscopy (AES) and X-ray diffraction (XRD) to clarify the interfacial reaction between Me-Ti and the A12O3 substrate. Me3Ti3O was observed at the interface between A12O3 and Me after annealing. Me3Ti3O was formed by oxidation of the Me-Ti compounds. The oxygen which reacted with the Me-Ti compounds has been found to be generated from the reduction of the A12O3 substrate.

The Collagenic Molecular Structural Unit of Solid State Complexes

1971 ◽  
Vol 29 ◽  
pp. 478-479
Author(s):  
Kenneth M. Richter ◽  
John A. Schilling
Keyword(s):  
Molecular Weight ◽  
Solid State ◽  
Structural Unit ◽  
X Ray Diffraction ◽  
X Ray ◽  
Naoh Treatment

The structural unit of solid state collagen complexes has been reported by Porter and Vanamee via EM and by Cowan, North and Randall via x-ray diffraction to be an ellipsoidal unit of 210-270 A. length by 50-100 A. diameter. It subsequently was independently demonstrated by us in dog tendon, dermis, and induced complexes. Its detailed morphologic, dimensional and molecular weight (MW) aspects have now been determined. It is pear-shaped in long profile with m diameters of 57 and 108 A. and m length of 263 A. (Fig. 1, tendon, KMnO4 fixation, Na-tungstate; Fig. 2a, schematic of unit in long, C, and x-sectional profiles of its thin, xB, and bulbous, xA portions; Fig. 2b, tendon essentially unmodified by ether and 0.4 N NaOH treatment, Na-tungstate). The unit consists of a uniquely coild cable, c, of ṁ 22.9 A. diameter and length of 2580-3316 A. The cable consists of three 2nd-strands, s, each of m 10.6 A.

Current Status of Solid-State X-Ray Systems

1985 ◽  
Vol 43 ◽  
pp. 158-161
Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis
Keyword(s):  
Solid State ◽  
Electric Fields ◽  
Spectral Lines ◽  
Current Status ◽  
Mobile Charge ◽  
Electron Hole ◽  
X Ray ◽  
Sensing Systems ◽  
Transmission Electron ◽  
Electron Microscopes

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

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