scholarly journals Energy dependence of the carrier mobility-lifetime product in hydrogenated amorphous silicon

1983 ◽  
Vol 27 (8) ◽  
pp. 4861-4871 ◽  
Author(s):  
Warren B. Jackson ◽  
R. J. Nemanich ◽  
Nabil M. Amer
Keyword(s):  
Amorphous Silicon ◽  
Energy Dependence ◽  
Carrier Mobility ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Electronic Transport in Hydrogenated Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
M. Silver ◽  
D. Adler ◽  
M. P. Shaw ◽  
V. Cannella ◽  
J. McGill
Keyword(s):  
Amorphous Silicon ◽  
Electronic Transport ◽  
Carrier Mobility ◽  
Single Injection ◽  
Hydrogenated Amorphous Silicon ◽  
Scattering Mechanism ◽  
Defect States ◽  
Double Injection ◽  
Charged Defects ◽  
Hydrogenated Amorphous

ABSTRACTThe puzzles regarding the magnitude of the free electron mobility in hydrogenated amorphous silicon are examined. It is suggested that highlevel double injection produces a metastable increase in the carrier mobility by neutralizing positively and negatively charged defect states thereby eliminating long-range potential fluctuations. Since these defect states cannot be neutralized under low-level or single injection, they both contribute to the modulation of the conduction band and increase the freecarrier scattering. If the latter is the predominant scattering mechanism, the neutralization of charged defects directly leads to a mobility increase under double-injection conditions. We discuss the various implications of this model, and present recent experimental results in agreement with these ideas.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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