Raman scattering from the surface phonon mode in GaP microcrystals

1982 ◽  
Vol 26 (12) ◽  
pp. 7079-7082 ◽  
Author(s):  
S. Hayashi ◽  
H. Kanamori
2014 ◽  
Vol 116 (4) ◽  
pp. 043517 ◽  
Author(s):  
Pragati Kumar ◽  
Nupur Saxena ◽  
Vinay Gupta ◽  
Fouran Singh ◽  
Avinash Agarwal

1999 ◽  
Vol 59 (11) ◽  
pp. 7285-7288 ◽  
Author(s):  
Young-Nam Hwang ◽  
Seung-Han Park ◽  
Dongho Kim

1987 ◽  
Vol 58 (19) ◽  
pp. 1941-1944 ◽  
Author(s):  
H. -J. Ernst ◽  
E. Hulpke ◽  
J. P. Toennies

1996 ◽  
Vol 215 (3-4) ◽  
pp. 215-217 ◽  
Author(s):  
Jianfeng Xu ◽  
Youwei Du

1996 ◽  
Author(s):  
V. A. Karavanskii ◽  
Evangelos Anastassakis ◽  
Y. S. Raptis ◽  
V. N. Sokolov ◽  
I. M. Tiginyanu ◽  
...  

1987 ◽  
Vol 99 ◽  
Author(s):  
A. Mascarenhas ◽  
H. Katayama-Yoshlda ◽  
S. Geller ◽  
J. I. Pánkové ◽  
S. K. Debt

ABSTRACTA Raman spectroscopie investigation of specimens of superconducting YBa2Cu3O7−x and semiconducting YBa2Cu3O6+x indicates that in the range 100 to 700 cm-1, the characteristic lines of the superconductor at 13 K, are at 150, 338, 441, 507, 590, and 644 cm-1. Comparison of the Ranan spectra of the superconductor and the semiconductor indicates a mode stiffening of the pair at 338 and 441 cm-1, hut a mode softening of the pair at 507 and 590 cm-1. A factor group analysis leads to a tentative assignment of the Raman and infrared allowed modes. At temperatures 12K < T < 180K the Raman spectra of the superconductor indicate that the phonon mode at 338 cm-1 has an anomalous temperature dependence below the superconducting critical temperature (Tc).


2003 ◽  
Vol 776 ◽  
Author(s):  
Hung-Min Lin ◽  
Jian Yang ◽  
Yong-Lin Chen ◽  
Yau-Chung Liu ◽  
Kai-Min Yin ◽  
...  

AbstractHigh-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.


1993 ◽  
Vol 54 (1-3) ◽  
pp. 169-172 ◽  
Author(s):  
Eugene N. Dolgov ◽  
Eugene Ya. Sherman

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