Resistive transition in two-dimensional arrays of superconducting weak links

1982 ◽  
Vol 26 (9) ◽  
pp. 5268-5271 ◽  
Author(s):  
David W. Abraham ◽  
C. J. Lobb ◽  
M. Tinkham ◽  
T. M. Klapwijk
1995 ◽  
Vol 70 (1-3) ◽  
pp. 915-916 ◽  
Author(s):  
Hirohiko Sato ◽  
Hiromi Taniguchi ◽  
Yasuhiro Nakazawa ◽  
Atsushi Kawamoto ◽  
Kiyonori Kato ◽  
...  

2014 ◽  
Vol 89 (8) ◽  
Author(s):  
N. B. Kopnin ◽  
A. S. Mel'nikov ◽  
I. A. Sadovskyy ◽  
V. M. Vinokur

1974 ◽  
Vol 45 (9) ◽  
pp. 4016-4024 ◽  
Author(s):  
Paul K. Hansma ◽  
John R. Kirtley
Keyword(s):  

1990 ◽  
Vol 64 (14) ◽  
pp. 1666-1669 ◽  
Author(s):  
R. C. Budhani ◽  
D. O. Welch ◽  
M. Suenaga ◽  
R. L. Sabatini

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 398
Author(s):  
Gyanendra Singh ◽  
Edouard Lesne ◽  
Dag Winkler ◽  
Tord Claeson ◽  
Thilo Bauch ◽  
...  

The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO), hosts a quasi-two-dimensional electron gas (q2DEG), two-dimensional superconductivity, ferromagnetism, and giant Rashba spin-orbit coupling. The co-existence of two-dimensional superconductivity with gate-tunable spin-orbit coupling and multiband occupation is of particular interest for the realization of unconventional superconducting pairing. To investigate the symmetry of the superconducting order parameter, phase sensitive measurements of the Josephson effect are required. We describe an approach for the fabrication of artificial superconducting weak links at the LAO/STO interface using direct high-resolution electron beam lithography and low-energy argon ion beam irradiation. The method does not require lift-off steps or sacrificial layers. Therefore, resolution is only limited by the electron beam lithography and pattern transfer. We have realized superconducting weak links with a barrier thickness of 30–100 nm. The barrier transparency of the weak links can be controlled by the irradiation dose and further tuned by a gate voltage. Our results open up new possibilities for the realization of quantum devices in oxide interfaces.


2000 ◽  
Vol 659 ◽  
Author(s):  
Lyuba A. Delimova ◽  
Igor V. Grekhov ◽  
Ivan A. Liniichuk ◽  
Ivan A. Veselovsky ◽  
Konstantin B. Traito ◽  
...  

ABSTRACTWe studied the transition of 8 nm-thick YBCO films deposited with and without YBaCuNbO buffer from the superconducting to resistive state due to the temperature or transport current increase. For both film types, the current –voltage characteristics and resistive transition followed the Kosterlitz-Thouless transition model. The superfluid densities were found from the Kosterlitz-Thouless transition temperature TKT to be about 3% and 1.3% of the total carrier density in YBCO with and without buffer, respectively. We believe that the low superfluid densities indicate the presence of weak links in the film.


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