Ion channeling in natural diamond. II. Critical angles

1982 ◽  
Vol 26 (1) ◽  
pp. 17-25 ◽  
Author(s):  
T. E. Derry ◽  
R. W. Fearick ◽  
J. P. F. Sellschop
1981 ◽  
Vol 24 (7) ◽  
pp. 3675-3680 ◽  
Author(s):  
T. E. Derry ◽  
R. W. Fearick ◽  
J. P. F. Sellschop

Author(s):  
R. Levi-Setti ◽  
J.M. Chabala ◽  
Y.L. Wang

Finely focused beams extracted from liquid metal ion sources (LMIS) provide a wealth of secondary signals which can be exploited to create high resolution images by the scanning method. The images of scanning ion microscopy (SIM) encompass a variety of contrast mechanisms which we classify into two broad categories: a) Emission contrast and b) Analytical contrast.Emission contrast refers to those mechanisms inherent to the emission of secondaries by solids under ion bombardment. The contrast-carrying signals consist of ion-induced secondary electrons (ISE) and secondary ions (ISI). Both signals exhibit i) topographic emission contrast due to the existence of differential geometric emission and collection effects, ii) crystallographic emission contrast, due to primary ion channeling phenomena and differential oxidation of crystalline surfaces, iii) chemical emission or Z-contrast, related to the dependence of the secondary emission yields on the Z and surface chemical state of the target.


Author(s):  
J C Walmsley ◽  
A R Lang

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.


2018 ◽  
Vol 36 (2) ◽  
pp. 134-141
Author(s):  
Shi Tang ◽  
Jun Su ◽  
Taijin Lu ◽  
Yongwang Ma ◽  
Jie Ke ◽  
...  

1979 ◽  
Vol 30 (6) ◽  
pp. 333-335 ◽  
Author(s):  
L. Reggiani ◽  
S. Bosi ◽  
C. Canali ◽  
F. Nava ◽  
S.F. Kozlov

CrystEngComm ◽  
2021 ◽  
Author(s):  
Shuai Fang ◽  
Yongkui Wang ◽  
Liangchao Chen ◽  
Zhiyun Lu ◽  
Zhenghao Cai ◽  
...  

Pressure is a necessary condition for the growth of natural diamond. Studying the effect of pressure on the nitrogen content of diamond is important for exploring the growth mechanism of...


1997 ◽  
Vol 3 (S2) ◽  
pp. 413-414
Author(s):  
E.M. Hunt ◽  
J.M. Hampikian ◽  
N.D. Evans

Ion implantation can be used to alter the optical response of insulators through the formation of embedded nano-sized particles. Single crystal alumina has been implanted at ambient temperature with 50 keV Ca+ to a fluence of 5 x 1016 ions/cm2. Ion channeling, Knoop microhardness measurements, and transmission electron microscopy (TEM) indicate that the alumina surface layer was amorphized by the implant. TEM also revealed nano-sized crystals ≈7 - 8 nm in diameter as seen in Figure 1. These nanocrystals are randomly oriented, and exhibit a face-centered cubic structure (FCC) with a lattice parameter of 0.409 nm ± 0.002 nm. The similarity between this crystallography and that of pure aluminum (which is FCC with a lattice parameter of 0.404 nm) suggests that they are metallic aluminum nanocrystals with a slightly dilated lattice parameter, possibly due to the incorporation of a small amount of calcium.Energy-filtered transmission electron microscopy (EFTEM) provides an avenue by which to confirm the metallic nature of the aluminum involved in the nanocrystals.


1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.


2008 ◽  
Author(s):  
S. K. Sudheer ◽  
Bharat Kakadia ◽  
V. P. Mahadevan Pillai ◽  
George A. Shafeev ◽  
Alexander V. Simakin

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