Surface structure of ZnTe (110) as determined from dynamical analysis of low-energy-electron diffraction intensities

1980 ◽  
Vol 22 (6) ◽  
pp. 2875-2886 ◽  
Author(s):  
R. J. Meyer ◽  
C. B. Duke ◽  
A. Paton ◽  
E. So ◽  
J. L. Yeh ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Low Energy ◽  
Energy Electron ◽  
Dynamical Analysis ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Determination of the surface structure of layered compounds by low-energy electron diffraction

1977 ◽  
Vol 38 (2) ◽  
pp. 387-395 ◽  
Author(s):  
B. J. Mrstik ◽  
R. Kaplan ◽  
T. L. Reinecke ◽  
M. Van Hove ◽  
S. Y. Tong
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Low Energy ◽  
Energy Electron ◽  
Layered Compounds ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

INCOMMENSURATE METALLIC SURFACTANT LAYER ON TOP OF InN FILM

2006 ◽  
Vol 13 (06) ◽  
pp. 815-818 ◽  
Author(s):  
Y. LIU ◽  
J. WANG ◽  
M. H. XIE ◽  
H. S. WU
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Buffer Layer ◽  
Low Energy ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Incommensurate Structure ◽  
Low Energy Electron ◽  
Gan Buffer Layer

The surface structure of InN film heteroepitaxially grown on a GaN buffer layer by MBE is followed by low energy electron diffraction (LEED). The metallic surfactant layers on top of the InN surfaces show an incommensurate structure rather than being disordered. The metal in the incommensurate structure induces additional diffraction spots in the LEED. Based on the Auger experiments, not only In atoms but also Ga are present on the surface of the InN films.

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