Oxygen impurity states in an amorphous silicon matrix

1980 ◽  
Vol 22 (6) ◽  
pp. 2816-2822 ◽  
Author(s):  
W. Y. Ching
Keyword(s):  
Amorphous Silicon ◽  
Oxygen Impurity ◽  
Impurity States ◽  
Silicon Matrix

Nature of impurity states in doped amorphous silicon

2000 ◽  
Vol 61 (15) ◽  
pp. 10206-10210 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Amorphous Silicon ◽  
Impurity States

Electronic Transitions in Mixed Phase Crystalline/Amorphous Silicon in the Low Crystalline Fraction Regime

1999 ◽  
Vol 557 ◽  
Author(s):  
J. David Cohen ◽  
Daewon Kwon ◽  
Chih-Chiang Chen ◽  
Hyun-Chul Jin ◽  
Eric Hollar ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Cross Section ◽  
Optical Transition ◽  
Electronic Transitions ◽  
Crystalline Fraction ◽  
Silicon Matrix ◽  
Transient Photocurrent ◽  
Dc Reactive Magnetron Sputtering ◽  
Optical Cross Section ◽  
Low Crystalline

AbstractAmorphous silicon films were prepared by dc reactive magnetron sputtering under conditions approaching the phase transition to microcrystallinity. Using TEM imaging these films were found to contain clusters of 5 to 50 nm sized Si crystallites embedded in an amorphous silicon matrix. Photocapacitance and transient photocurrent sub-band-gap optical spectra of this material appear to consist of a superposition of a spectrum typical of amorphous silicon together with an optical transition, with a threshold near 1. 1eV, that exhibits a very large optical cross section. This transition arises from valence band electrons being optically inserted into empty levels lying within the amorphous silicon mobility gap. Using modulated photocurrent methods we have determined that these states also dominate the electron deep trapping in this material. We argue that these states arise from defects at the crystalline-amorphous boundary.

Influence of oxygen impurity in the intrinsic layer of amorphous silicon solar cells

1994 ◽  
Vol 65 (18) ◽  
pp. 2329-2331 ◽  
Author(s):  
Masao Isomura ◽  
Toshihiro Kinoshita ◽  
Yoshihiro Hishikawa ◽  
Shinya Tsuda
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Oxygen Impurity

Photoluminescence and structure investigations of Si nano-crystals in amorphous silicon matrix

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1188-1191 ◽  
Author(s):  
T.V. Torchynska ◽  
A. Vivas Hernandez ◽  
Yasuhiro Matsumoto ◽  
L. Khomenkova ◽  
L. Shcherbina
Keyword(s):  
Amorphous Silicon ◽  
Silicon Matrix ◽  
Structure Investigations

Lattice-distortion-induced amorphization in indented [110] silicon

1999 ◽  
Vol 14 (3) ◽  
pp. 682-687 ◽  
Author(s):  
Y. Q. Wu ◽  
Y. B. Xu
Keyword(s):  
Amorphous Silicon ◽  
Lattice Distortion ◽  
Lattice Structure ◽  
Amorphous Structure ◽  
Vickers Indentation ◽  
Continuous Transition ◽  
Silicon Matrix ◽  
Transmission Electron ◽  
Matrix Deformation ◽  
Fine Structures

High-resolution transmission electron microscopy (HRTEM) is used to reveal fine structures of amorphous silicon induced by Vickers indentation and its interface with unindented silicon matrix. Deformation microtwins at the interface and continuous transition from lattice structure of crystal into amorphous structure at the interface are observed. Within the amorphous silicon near the periphery of the indented region, there are many clusters characterized by distorted silicon lattice. A possible mechanism of lattice-distortion-induced amorphization at the periphery of indented silicon is suggested. All the indentations are performed at ambient temperature.

Nature of the Impurity States Arising from Transition Metals in Hydrogenated Amorphous Silicon

1989 ◽  
Vol 155 (2) ◽  
pp. K113-K118
Author(s):  
F. S. Nasredinov ◽  
M. M. Mezdrogina ◽  
P. P. Seregin ◽  
U. Zh. Abdumanapov ◽  
U. S. Tursunov
Keyword(s):  
Transition Metals ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Impurity States ◽  
Hydrogenated Amorphous
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