Minority-carrier injection and extraction inn-type germanium

1980 ◽  
Vol 21 (2) ◽  
pp. 723-729 ◽  
Author(s):  
G. Rieder ◽  
H. K. Henisch ◽  
S. Rahimi ◽  
J. -C. Manifacier
Keyword(s):  
Minority Carrier ◽  
Carrier Injection

Minority carrier injection limited current in Re/4H-SiC Schottky diodes

2010 ◽  
Vol 207 (6) ◽  
pp. 1509-1513 ◽  
Author(s):  
K. Sarpatwari ◽  
S. E. Mohney ◽  
S. Ashok ◽  
O. O. Awadelkarim
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Limited Current

Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD

2020 ◽  
Vol 1004 ◽  
pp. 801-807
Author(s):  
Takaaki Tominaga ◽  
Shiro Hino ◽  
Yohei Mitsui ◽  
Junichi Nakashima ◽  
Koutarou Kawahara ◽  
...  
Keyword(s):  
High Frequency ◽  
Minority Carrier ◽  
Total Loss ◽  
Loss Reduction ◽  
Carrier Injection ◽  
Power Module ◽  
Chip Area ◽  
Dc Characteristics ◽  
High Frequency Operation ◽  
Switching Characteristics

A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-MOSFET due to larger cell pitch, superior switching characteristics of SiC-MOSFET embedding SBD, which are due to smaller total chip area than that of SiC-MOSFET coupled with external SBD and due to elimination of recovery charge by minority carrier injection compared with SiC-MOSFET utilizing its body diode, enable the total loss reduction especially for high frequency operation.

Generation of interstitial boron by minority-carrier injection

2003 ◽  
Vol 75 (3-4) ◽  
pp. 405-409
Author(s):  
Yoshio Ohshita ◽  
Tuong Khanh Vu ◽  
Masafumi Yamaguchi
Keyword(s):  
Minority Carrier ◽  
Carrier Injection

Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level

2016 ◽  
Vol 121 ◽  
pp. 41-46 ◽  
Author(s):  
Tigran T. Mnatsakanov ◽  
Michael E. Levinshtein ◽  
Alexey G. Tandoev ◽  
Sergey N. Yurkov ◽  
John W. Palmour
Keyword(s):  
Minority Carrier ◽  
Schottky Diodes ◽  
Carrier Injection ◽  
Injection Level ◽  
High Injection Level ◽  
High Injection ◽  
Current Voltage ◽  
Current Voltage Characteristics

GaN-Based Laser Diodes Processed by Annealing with Minority-Carrier Injection

1999 ◽  
Vol 38 (Part 2, No. 11A) ◽  
pp. L1237-L1239 ◽  
Author(s):  
Mamoru Miyachi ◽  
Hiroyuki Ota ◽  
Yoshinori Kimura ◽  
Atsushi Watanabe ◽  
Toshiyuki Tanaka ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Laser Diodes ◽  
Carrier Injection
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