Effect of the Auger-type transition on the intersubband optical absorption in Si surface inversion layers

1979 ◽  
Vol 20 (10) ◽  
pp. 4244-4250 ◽  
Author(s):  
C. S. Ting ◽  
A. K. Ganguly
Keyword(s):  
Optical Absorption ◽  
Type Transition ◽  
Surface Inversion ◽  
Intersubband Optical Absorption

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

INTERSUBBAND OPTICAL ABSORPTION COEFFICIENTS AND REFRACTIVE INDEX CHANGES OF AN ELLIPSOIDAL FINITE POTENTIAL QUANTUM DOT

2010 ◽  
Vol 19 (01) ◽  
pp. 131-143 ◽  
Author(s):  
G. REZAEI ◽  
M. R. K. VAHDANI ◽  
M. BARATI
Keyword(s):  
Refractive Index ◽  
Light Intensity ◽  
Optical Absorption ◽  
Quantum Dot ◽  
Absorption Coefficient ◽  
Optical Absorption Coefficient ◽  
Matrix Formalism ◽  
Ellipsoidal Quantum Dot ◽  
Index Changes ◽  
Intersubband Optical Absorption

Intersubband optical absorption coefficient and refractive index changes of a weakly prolate ellipsoidal quantum dot, using the compact-density matrix formalism and iterative method, are investigated. In this regard, the linear and nonlinear intersubband optical absorption coefficient and refractive index changes of a GaAs / Al x Ga 1-x As ellipsoidal quantum dot, as functions of the dot radius, ellipticity constant, stoichiometric ratio and incident light intensity are calculated. The results indicate that absorption coefficient and refractive index changes strongly depend on the light intensity, size and geometry of the dot and structure parameters such as aluminium concentration in GaAs / Al x Ga 1-x As structures.

Intersubband optical absorption in heavily dopedn-type GaAs/Al0.3Ga0.7As multiple quantum wells

1992 ◽  
Vol 46 (11) ◽  
pp. 7208-7211 ◽  
Author(s):  
B. Jogai ◽  
M. O. Manasreh ◽  
C. E. Stutz ◽  
R. L. Whitney ◽  
D. K. Kinell
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Optical Absorption

Intersubband optical absorption in a biased superlattice

1989 ◽  
Vol 65 (12) ◽  
pp. 5019-5023 ◽  
Author(s):  
J. Leo ◽  
B. Movaghar
Keyword(s):  
Optical Absorption ◽  
Intersubband Optical Absorption
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