T2electrical resistivity due to electron-phonon scattering on a small cylindrical Fermi surface: Application to bismuth

1978 ◽  
Vol 18 (4) ◽  
pp. 1849-1853 ◽  
Author(s):  
Carl A. Kukkonen
1977 ◽  
Vol 55 (6) ◽  
pp. 521-527 ◽  
Author(s):  
M. E. Brett ◽  
J. E. Black

The results of numerical calculations of the electrical and thermal lattice resistivity of copper at temperatures (T) below 20 K are presented. We have calculated the matrix element for electron–phonon scattering using two OPW electronic states and the Born – von Karman method of determining the phonon frequencies and eigenvectors. We have used the eight-cone model of the Fermi surface in which necks intersecting the Brillouin zone and the spherical belly regions are both present.The lattice electrical resistivity is calculated for two limiting cases. In the first case the resistivity is that expected when no impurities are present in the metal. In the second case the impurity resistivity is taken to dominate the lattice resistivity. We show that the T3 behaviour of lattice resistivity recently observed experimentally below 10 K can be understood as occurring when the temperature is lowered and the total resistivity moves from the lattice dominated to impurity dominated case.The results of a preliminary calculation, in which a more exact Fermi surface and 27 APW electronic states were used, are also described.


1974 ◽  
Vol 52 (7) ◽  
pp. 618-623 ◽  
Author(s):  
P. T. Truant ◽  
J. P. Carbotte

The electron–phonon scattering times in pure aluminum vary with position on the Fermi surface. There are several sources of this anisotropy. Perhaps the most obvious, but not necessarily the most important, is the distortions of the Fermi surface from a sphere. Another results from the anisotropy in the electron–phonon interaction and in the phonon spectrum. We have calculated the effect on the electron–phonon scattering times of this latter source of anisotropy. We find large variations over the Fermi surface. As the temperature is increased the anisotropy reduces but it is still significant even above 100 K.


2014 ◽  
Vol 5 (3) ◽  
pp. 982-992 ◽  
Author(s):  
M AL-Jalali

Resistivity temperature – dependence and residual resistivity concentration-dependence in pure noble metals(Cu, Ag, Au) have been studied at low temperatures. Dominations of electron – dislocation and impurity, electron-electron, and electron-phonon scattering were analyzed, contribution of these mechanisms to resistivity were discussed, taking into consideration existing theoretical models and available experimental data, where some new results and ideas were investigated.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Junsoo Park ◽  
Maxwell Dylla ◽  
Yi Xia ◽  
Max Wood ◽  
G. Jeffrey Snyder ◽  
...  

AbstractBand convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg2Sb2-CaZn2Sb2 Zintl system and full Heusler Sr2SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.


2020 ◽  
Vol 102 (11) ◽  
Author(s):  
Ransell D'Souza ◽  
Jiang Cao ◽  
José D. Querales-Flores ◽  
Stephen Fahy ◽  
Ivana Savić

ACS Omega ◽  
2019 ◽  
Vol 4 (25) ◽  
pp. 21487-21493 ◽  
Author(s):  
Benoit Galvani ◽  
Daniel Suchet ◽  
Amaury Delamarre ◽  
Marc Bescond ◽  
Fabienne Velia Michelini ◽  
...  

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