Photoemission study of the bulk and surface electronic structure of single crystals of gold

1978 ◽  
Vol 18 (4) ◽  
pp. 1572-1585 ◽  
Author(s):  
G. V. Hansson ◽  
S. A. Flodström
Keyword(s):  
Electronic Structure ◽  
Single Crystals ◽  
Surface Electronic Structure ◽  
Photoemission Study

Surface Electronic Structure of Hybrid Organo Lead Bromide Perovskite Single Crystals

2016 ◽  
Vol 120 (38) ◽  
pp. 21710-21715 ◽  
Author(s):  
Takashi Komesu ◽  
Xin Huang ◽  
Tula R. Paudel ◽  
Yaroslav B. Losovyj ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Single Crystals ◽  
Surface Electronic Structure ◽  
Lead Bromide

Surface electronic structure of heavily-ion-implanted and laser-annealed Si single crystals

1990 ◽  
Vol 41 (6) ◽  
pp. 3728-3732 ◽  
Author(s):  
Fulvio Parmigiani ◽  
Paul S. Bagus ◽  
Gianfranco Pacchioni ◽  
Angiolino Stella
Keyword(s):  
Electronic Structure ◽  
Single Crystals ◽  
Surface Electronic Structure ◽  
Ion Implanted

scholarly journals Experimental and Theoretical Investigation of the Surface Electronic Structure of ZnGa 2 O 4 (100) Single‐Crystals

2021 ◽  
Author(s):  
Felix Reichmann ◽  
Jaroslaw Dabrowski ◽  
Andreas Paul Becker ◽  
Wolfgang Matthias Klesse ◽  
Klaus Irmscher ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Single Crystals ◽  
Theoretical Investigation ◽  
Surface Electronic Structure

Photoemission Study of The Electronic Structure of Wurtzite Gan(0001) Surfaces

1997 ◽  
Vol 482 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S. Dhesi ◽  
Cristian B. Stagarescu ◽  
James Downes ◽  
D. Doppalapudi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Surface State ◽  
High Vacuum ◽  
Valence Band Maximum ◽  
Ultra High Vacuum ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Surface Electronic Structure ◽  
Bond State ◽  
Photoemission Study

AbstractThe surface electronic structure of wurtzite GaN (0001) (1 × 1) has been investigated using angle-resolved photoemission spectroscopy. Surfaces were cleaned by repeated cycles of N2 ion bombardment and annealing in ultra-high vacuum. A well-defined surface state below the top of the valence band is clearly observed. This state is sensitive to the adsorption of both activated H2 and O2, and exists in a projected bulk band gap, below the valence band maximum. The state shows no dispersion perpendicular or parallel to the surface. The symmetry of this surface state is even with respect to the mirror planes of the surface and polarization measurements indicate that it is of spz character, consistent with a dangling bond state.

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