Multiple-trapping model of anomalous transit-time dispersion ina−Se

1977 ◽  
Vol 16 (10) ◽  
pp. 4466-4473 ◽  
Author(s):  
J. Noolandi
Keyword(s):  
Transit Time ◽  
Multiple Trapping ◽  
Time Dispersion ◽  
Multiple Trapping Model ◽  
Trapping Model

The multiple‐trapping model and hole transport in SiO2

1977 ◽  
Vol 48 (9) ◽  
pp. 3819-3828 ◽  
Author(s):  
O. L. Curtis ◽  
J. R. Srour
Keyword(s):  
Hole Transport ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

A multiple-trapping model with optical bias

1985 ◽  
Vol 52 (6) ◽  
pp. 1075-1095 ◽  
Author(s):  
R. Pandya ◽  
E. A. Schiff
Keyword(s):  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model

Multiple-Trapping Model for the Charge Recombination Dynamics in Mesoporous-Structured Perovskite Solar Cells

ChemSusChem ◽  
2017 ◽  
Vol 10 (24) ◽  
pp. 4872-4878 ◽  
Author(s):  
Hao-Yi Wang ◽  
Yi Wang ◽  
Ming-Yang Hao ◽  
Yujun Qin ◽  
Li-Min Fu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Charge Recombination ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
Recombination Dynamics

scholarly journals Localised States in Microcrystalline Silicon Photovoltaic Structures Studied by Post-Transit Time-of-Flight Spectroscopy

2003 ◽  
Vol 762 ◽  
Author(s):  
Steve Reynolds ◽  
Vladimir Smirnov ◽  
Charlie Main ◽  
Reinhard Carius ◽  
Friedhelm Finger
Keyword(s):  
Transit Time ◽  
Carrier Transport ◽  
Time Of Flight ◽  
Microcrystalline Silicon ◽  
Mobility Edge ◽  
Cell Structures ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Localised States ◽  
Time Of Flight Spectroscopy

AbstractPost-transit time-of-flight spectroscopy has been used to study the density of states distribution in hot-wire CVD microcrystalline silicon pin solar cell structures. For an absorber layer Raman scattering intensity ratio ICRS of 0.4 or less, behaviour consistent with multiple-trapping carrier transport is observed and may be interpreted in terms of a conduction-band tail of some 18 meV slope plus a broad defect bump of order 1017 cm-3 centered at 0.55 eV relative to the mobility edge. As ICRS is increased beyond 0.4, the temperature-dependence of the photocurrent transient becomes inconsistent with multiple-trapping and above 0.6 the decays are almost temperature-independent. By comparing data taken at 300 K, it may be inferred from the multiple-trapping model that localised states between 0.35 and 0.5 eV are associated with the presence of columns or clusters of nanocrystals and those deeper than 0.5 eV with the amorphous tissue. Results are compared with previous work on coplanar and sandwich structures.

Optical Bias Enhanced Transient Photoconductivity in a-Si:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Xing Chen ◽  
Chen-Yu Tai
Keyword(s):  
Room Temperature ◽  
Decay Constant ◽  
Experimental Result ◽  
Density Of State ◽  
Transient Photocurrent ◽  
Transient Photoconductivity ◽  
Multiple Trapping ◽  
Multiple Trapping Model ◽  
Trapping Model ◽  
Bias Level

ABSTRACTOptical bias enhancement in transient photocurrent, by a factor of more than 10, is observed in a-Si:H films. The transient photocurrent is found to decay exponentially shortly after the light pulse is turned off. The exponential decay constant of the transient current is found to be proportional to (optical bias level)−0.38 at room temperature. A theory based on the multiple trapping model is developed to explain the experimental result. This effect is applied to study the density of state of the sample as well as the process of charge recombination.

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