Surface spectroscopy of Schottky-barrier formation on Si(111) 7 × 7: Photoemission studies of filled surface states and band bending

1976 ◽  
Vol 14 (12) ◽  
pp. 5396-5403 ◽  
Author(s):  
G. Margaritondo ◽  
J. E. Rowe ◽  
S. B. Christman
Keyword(s):  
Schottky Barrier ◽  
Surface States ◽  
Band Bending ◽  
Barrier Formation ◽  
Surface Spectroscopy

Photoemission studies of surface states and Schottky-barrier formation on Inp

1976 ◽  
Vol 13 (10) ◽  
pp. 4439-4446 ◽  
Author(s):  
P. W. Chye ◽  
I. A. Babalola ◽  
T. Sukegawa ◽  
W. E. Spicer
Keyword(s):  
Schottky Barrier ◽  
Surface States ◽  
Barrier Formation

Metal-Induced Surface States during Schottky-Barrier Formation on Si, Ge, and GaAs

1975 ◽  
Vol 35 (21) ◽  
pp. 1471-1475 ◽  
Author(s):  
J. E. Rowe ◽  
S. B. Christman ◽  
G. Margaritondo
Keyword(s):  
Schottky Barrier ◽  
Surface States ◽  
Barrier Formation

Transition from Schottky Limit to Bardeen Limit in the Schottky Barrier Formation of al on n- and p-GaAs(110) Interfaces

1986 ◽  
Vol 77 ◽  
Author(s):  
K. K. Chin ◽  
R. Cao ◽  
T. Kendelewicz ◽  
K. Miyano ◽  
M. D. Williams ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Defect Model ◽  
Surface Band ◽  
Band Bending ◽  
Pinning Centers ◽  
Free Interface ◽  
Barrier Formation ◽  
Surface Disturbance

ABSTRACTSchottky barrier formation at room temperature (RT) and low temperature (LT) is studied by photoemission. In the low Al coverage regime (from 0.001 to about 1 ML), it is found that, compared to RT pinning behavior, the n-GaAs(110) surface band bending is attenuated, while the p-GaAs(110) surface band bending is enhanced. This striking phenomenon indicates that, by lowering the substrate temperature, one reduces the disturbance of the GaAs(110) surface, and the surface Fermi level of the n- and p-GaAs(110) tends to go to the same position, the so-called Schottky limit that characterizes a perfect defect-free interface. However, as the coverage increases (up to 30 ML), a new mechanism (in the framework of the unified defect model, it is the formation of defect levels due to the energy released as the adsorbed Al atoms start to form clusters and replace Ga) associated with a disturbed surface becomes dominant. Thus, the LT Fermi level positions of n- and p-GaAs move towards the RT positions, the so-called Bardeen limit. This demonstrates that, by controlling the surface disturbance, one can modify the Schottky barrier formation process, going from the Schottky limit which does not have pinning centers to the Bardeen limit which suggests the existence of pinning centers.

scholarly journals Band bending in the initial stages of Schottky-barrier formation for gallium on Si(113)

1990 ◽  
Vol 41 (5) ◽  
pp. 2849-2854 ◽  
Author(s):  
P. Althainz ◽  
U. Myler ◽  
K. Jacobi
Keyword(s):  
Schottky Barrier ◽  
Band Bending ◽  
Barrier Formation

Soft X-Ray Photoemission Measurement of Schottky Barrier Formation at The Pd-si Interface

1982 ◽  
Vol 18 ◽  
Author(s):  
R. Purtell ◽  
P. S. Ho ◽  
G. W. Rubloff ◽  
G. Holinger
Keyword(s):  
Binding Energy ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Core Level ◽  
Naval Research ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Height Change

The binding energy of the bulk Si 2p levels observed with soft X-ray photoemission can be used to monitor the band bending in the silicon space charge region when a metal is deposited onto the silicon surface. Changes in the 2p binding energy with metal coverage can then be used to determine the change in the Schottky barrier height as the metal-silicon contact is formed. By tuning the photon energy and therefore the photoemitted electron escape depth, chemical shifts (atomic environment effects) at the interface can be separated from the bulk band bending effects. When combined with annealing to produce in-depth atomic intermixing, the result may reveal information on the distribution of metal atoms at the interface and its effect on the barrier height.Measurements of the Schottky barrier height change as a function of palladium deposition were made on (2 × 1) p-type and (7 × 7) n-type Si(111) surfaces by monitoring Si 2p core level shifts in a bulk sensitive mode. The barrier height change reached 1/e of its final value at a palladium coverage of 2.9 Å. Several experiments have made it possible to relate the measured Si 2p core level monitor of band bending to absolute Schottky barrier heights in a fully consistent fashion. Therefore, these results provide a means to measure the barrier height in the initial stages of Schottky barrier formation (i.e. at low metal coverage) and to compare these observations with the chemical behavior of the interface at low coverage and with electrical measurements on bulk contacts. Since the Pd/Si Schottky barrier height is established at the bulk value within a coverage of 3–5 Å (even before the overlayer is metallic), the role of interface chemical bonds in determining the barrier height is paramount.This work was supported in part by the U.S. Office of Naval Research.

scholarly journals Schottky barrier formation and band bending revealed by first- principles calculations

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yang Jiao ◽  
Anders Hellman ◽  
Yurui Fang ◽  
Shiwu Gao ◽  
Mikael Käll
Keyword(s):  
Schottky Barrier ◽  
First Principles ◽  
First Principles Calculations ◽  
Band Bending ◽  
Barrier Formation

Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces

1991 ◽  
Vol 58 (20) ◽  
pp. 2243-2245 ◽  
Author(s):  
Masao Yamada ◽  
Anita K. Wahi ◽  
Paul L. Meissner ◽  
Alberto Herrera‐Gomez ◽  
Tom Kendelewicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Formation

Process-Dependent Electronic Structure at Metallized GaAs Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
L. J. Brillson ◽  
I. M. Vitomirov ◽  
A. Raisanen ◽  
S. Chang ◽  
R. E. Viturro ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Interaction ◽  
Deep Level ◽  
Multiple Roles ◽  
Atomic Scale ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Thermally Driven

ABSTRACTThe influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that electrically-active deep levels form on GaAs(100) surfaces and metal interfaces which depend on thermally-driven surface stoichiometry and reconstruction, chemical interaction, as well as surface misorientation and bulk crystal quality. These interface states are discrete and occur at multiple gap energies which can account for observed band bending. Characteristic trends in such deep level emission with interface processing provide guides for optimizing interface electronic behavior. Correspondingly, photoemission and internal photoemission spectroscopy measurements indicate self-consistent changes in barrier heights which may be heterogeneous and attributable to interface chemical reactions observed on a monolayer scale. These results highlight the multiple roles of atomic-scale structure in forming macroscopic electronic properties of compound semiconductor-metal junctions.

The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys
Keyword(s):  
Oxide Layer ◽  
Computer Modelling ◽  
Surface States ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Element Analysis ◽  
Surface Band ◽  
Band Bending ◽  
Wide Range ◽  
Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

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