Far-infrared magnetospectroscopy of the hole pocket in bismuth. I. Band-structure effects

1976 ◽  
Vol 14 (4) ◽  
pp. 1370-1394 ◽  
Author(s):  
H. R. Verdún ◽  
H. D. Drew
Keyword(s):  
Band Structure ◽  
Far Infrared ◽  
Hole Pocket

scholarly journals Electronic band structure of far-infrared Ga1-xInxSb/InAs superlattices

1993 ◽  
Vol 8 (1S) ◽  
pp. S102-S105 ◽  
Author(s):  
R H Miles ◽  
J N Schulman ◽  
D H Chow ◽  
T C McGill
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Far Infrared ◽  
Electronic Band

Correlation between band structure and magneto-transport properties in a far-infrared detector superlattice

2008 ◽  
Author(s):  
A. El Abidi ◽  
A. Nafidi ◽  
H. Chaib ◽  
A. El kaaouachi ◽  
A. Toumanari ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Infrared Detector ◽  
Far Infrared

Far-infrared transmittance and band-structure correspondence in two-dimensional air-rod photonic crystals

1997 ◽  
Vol 55 (16) ◽  
pp. 10443-10450 ◽  
Author(s):  
Mitsuo Wada ◽  
Yoshiyuki Doi ◽  
Kuon Inoue ◽  
J. W. Haus
Keyword(s):  
Photonic Crystals ◽  
Band Structure ◽  
Far Infrared ◽  
Two Dimensional ◽  
Infrared Transmittance

Far-infrared investigation of band-structure parameters and exchange interaction inPb1−xEuxTe films

1992 ◽  
Vol 46 (20) ◽  
pp. 13331-13338 ◽  
Author(s):  
G. Karczewski ◽  
J. K. Furdyna ◽  
D. L. Partin ◽  
C. N. Thrush ◽  
J. P. Heremans
Keyword(s):  
Band Structure ◽  
Exchange Interaction ◽  
Far Infrared ◽  
Structure Parameters

A study of radiation pressure in a refractive medium by the photon drag effect

1980 ◽  
Vol 370 (1742) ◽  
pp. 303-311 ◽  
Keyword(s):  
Band Structure ◽  
Radiation Pressure ◽  
Far Infrared ◽  
Drag Effect ◽  
Refractive Medium

The pressure of radiation in a refractive medium has been a matter of theoretical controversy for many years, though relatively few experiments have been performed. We have measured the photon drag effect in germanium and silicon in the far-infrared, up to a wavelength of 1.2 mm. At sufficiently long wavelengths the effect is independent of the semiconductor band structure and depends on the radiation pressure in the dielectric. We find that the expression originally deduced by Minkowski correctly describes our results.

Correlation Between Band Structure and Magneto- Transport Properties in HgTe/CdTe Two-Dimensional Far-Infrared Detector Superlattice

2012 ◽  
Vol 171 (5-6) ◽  
pp. 808-817 ◽  
Author(s):  
M. Braigue ◽  
A. Nafidi ◽  
A. Idbaha ◽  
H. Chaib ◽  
H. Sahsah ◽  
...  
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Infrared Detector ◽  
Far Infrared ◽  
Two Dimensional

Role of Exchange-Correlation Functional in Bulk Bismuth

2020 ◽  
Vol 978 ◽  
pp. 446-453
Author(s):  
Soumyasree Jena ◽  
Sanjoy Datta
Keyword(s):  
Band Structure ◽  
Plane Wave ◽  
Density Functional ◽  
Ambient Pressure ◽  
Basis Set ◽  
Hole Pocket ◽  
Exchange Correlation ◽  
Structure Density ◽  
Energy Convergence ◽  
Electron Pocket

Presence of Bismuth (Bi) leads to topologically nontrivial band structure in many materials, especially in topological insulators. Traditionally Bi is known to be a semimetal but, quite surprisingly, in a recent experiment bulk Bi has been found to be a superconductor below 0.53 mK at ambient pressure. In order to have a closer look at the electronic properties of bulk Bi in the wake of this unexpected experimental evidence of superconducting phase, we have performed density-functional-theory (DFT) based first principle calculations using plane-wave basis set and with suitable ionic pseudopotentials. We have computed the band structure, density of states and Fermi surfaces for two different type of exchange-correlation (XC) functionals, namely Perdew-Zunger (PZ) and Perdew-Burke-Ernzerhof (PBE) type. Each of these XC functional has been considered without and with spin orbit (SO) interaction. After carefully examining the energy-convergence with respect to plane wave basis set and k-points in each case, the band structure has been calculated along the path Γ-L-T-Γ. Without SO coupling, electron pocket is found near ‘L’ and exactly at ‘Г’ and hole pocket is at ‘T’ for PZ type XC functional, while in the case of PBE-type electron pocket is found exactly at ‘L’ but the hole pocket to be near to ‘T’. With SO coupling, in PZ-type, electron pocket remains at same position, but hole pocket appears only at ‘Г’ point. Finally, when SO coupling is taken into account along with PBE-type XC functional electrons and holes are found at ‘L’ and at ‘T’ respectively. Furthermore, in this case we also observe an increase in the number of holes at ‘T’.

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