Electronic Raman scattering and the metal-insulator transition in doped silicon

1976 ◽  
Vol 13 (12) ◽  
pp. 5448-5464 ◽  
Author(s):  
Kanti Jain ◽  
Shui Lai ◽  
Miles V. Klein
Keyword(s):  
Raman Scattering ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Electronic Raman Scattering ◽  
Doped Silicon

Magnetic Tuning of the Metal-Insulator Transition for Uncompensated Arsenic-Doped Silicon

1986 ◽  
Vol 56 (25) ◽  
pp. 2771-2771
Author(s):  
W. N. Shafarman ◽  
T. G. Castner ◽  
J. S. Brooks ◽  
K. P. Martin ◽  
M. J. Naughton
Keyword(s):  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Doped Silicon ◽  
Magnetic Tuning

The low temperature magnetoresistance of arsenic-doped silicon near the metal—Insulator transition

1985 ◽  
Vol 28 (1-2) ◽  
pp. 93-99 ◽  
Author(s):  
W.N. Shafarman ◽  
T.G. Castner ◽  
J.S. Brooks ◽  
K.P. Martin ◽  
M.J. Naughton
Keyword(s):  
Low Temperature ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Doped Silicon

scholarly journals Cryogenic microwave imaging of metal–insulator transition in doped silicon

2011 ◽  
Vol 82 (3) ◽  
pp. 033705 ◽  
Author(s):  
Worasom Kundhikanjana ◽  
Keji Lai ◽  
Michael A. Kelly ◽  
Zhi-Xun Shen
Keyword(s):  
Microwave Imaging ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Doped Silicon

scholarly journals Structural characterization of heat-treated activated carbon fibers

1992 ◽  
Vol 7 (7) ◽  
pp. 1788-1794 ◽  
Author(s):  
A.M. Rao ◽  
A.W.P. Fung ◽  
M.S. Dresselhaus ◽  
M. Endo
Keyword(s):  
Heat Treatment ◽  
Activated Carbon ◽  
Raman Scattering ◽  
Carbon Fibers ◽  
Insulator Transition ◽  
Activated Carbon Fibers ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Sequence Of Events ◽  
Heat Treated

Raman scattering, x-ray diffraction, and BET measurements are used to study the effect of heat treatment on the microstructure of activated carbon fibers (ACFs) and to correlate the structural changes with the metal-insulator transition observed in the electronic transport properties of heat-treated ACFs. A sequence of events is identified, starting with desorption, followed by micropore collapse plus the stacking of basic structural units in the c-direction, and ending up with in-plane crystallization. The graphitization process closely resembles that depicted by Oberlin's model, except that the final material at high-temperature heat treatment remains turbostratic. Because the metal-insulator transition was observed to occur at heat-treatment temperature THT ≃ 1200 °C, which is well below the THT value (2000 °C) for in-plane crystallization, we conclude that this electronic transition is not due to in-plane ordering but rather to the collapse of the micropore structure in the ACFs. Raman scattering also provides strong evidence for the presence of local two-dimensional graphene structures, which is the basis for the transport phenomena observed in heat-treated ACFs.

Sign in / Sign up

Export Citation Format

Share Document