Spin-orbit induced equilibrium spin currents in materials

2022 ◽  
Vol 105 (2) ◽  
Author(s):  
Andrea Droghetti ◽  
Ivan Rungger ◽  
Angel Rubio ◽  
Ilya V. Tokatly
Keyword(s):  
Spin Orbit ◽  
Spin Currents

scholarly journals Spin currents and spin–orbit torques in ferromagnetic trilayers

2018 ◽  
Vol 17 (6) ◽  
pp. 509-513 ◽  
Author(s):  
Seung-heon C. Baek ◽  
Vivek P. Amin ◽  
Young-Wan Oh ◽  
Gyungchoon Go ◽  
Seung-Jae Lee ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Spin Currents

scholarly journals Генерация спиновых токов в n-Si, легированном фосфором, сурьмой и висмутом и влияние на них процессов рассеяния спинов с переворотом

2021 ◽  
Vol 55 (8) ◽  
pp. 654
Author(s):  
А.А. Ежевский ◽  
Д.В. Гусейнов ◽  
А.В. Сухоруков ◽  
Е.А. Калинина ◽  
А.В. Новиков ◽  
...  
Keyword(s):  
Diffusion Model ◽  
Conduction Electron ◽  
Spin Diffusion ◽  
Electronic Conductivity ◽  
Silicon Layer ◽  
Spin Orbit ◽  
Spin Pumping ◽  
Spin Currents ◽  
Orbit Potential ◽  
Spin Scattering

Doping of silicon with bismuth leads to additional spin scattering of the conduction electron by the spin-orbit potential introduced by a heavy donor. In this paper, we discuss spin flip scattering influence on the generation of spin currents in silicon with electronic conductivity. Based on the theory of spin pumping and the diffusion model, the values of spin currents and voltages of the ISHE are calculated with varying the type of donor and its concentration and the spin diffusion lengths. Calculations made it possible to find the dependences of the magnitudes of the effects on the parameters of silicon layers doped with bismuth, and to explain the absence of ISHE signals when the silicon layer is doped only with phosphorus or antimony with a concentration of Nd> 1019 cm-3.

Spin currents in semiconductor nanostructures: A non-equilibrium Green-function approach

2017 ◽  
Author(s):  
Branislav K. Nikolic ◽  
Liviu P. Zarbo ◽  
Satofumi Souma
Keyword(s):  
Green Function ◽  
Spin Current ◽  
Semiconductor Nanostructures ◽  
Pure Spin ◽  
Current Operator ◽  
Spin Orbit ◽  
Spin Currents ◽  
Low Dimensional ◽  
Green Function Approach ◽  
Non Equilibrium

This article examines spin currents and spin densities in realistic open semiconductor nanostructures using different tools of quantum-transport theory based on the non-equilibrium Green function (NEGF) approach. It begins with an introduction to the essential theoretical formalism and practical computational techniques before explaining what pure spin current is and how pure spin currents can be generated and detected. It then considers the spin-Hall effect (SHE), and especially the mesoscopic SHE, along with spin-orbit couplings in low-dimensional semiconductors. It also describes spin-current operator, spindensity, and spin accumulation in the presence of intrinsic spin-orbit couplings, as well as the NEGF approach to spin transport in multiterminal spin-orbit-coupled nanostructures. The article concludes by reviewing formal developments with examples drawn from the field of the mesoscopic SHE in low-dimensional spin-orbit-coupled semiconductor nanostructures.

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