scholarly journals Tunable spin polarization and electronic structure of bottom-up synthesized MoSi2N4 materials

2021 ◽  
Vol 104 (20) ◽  
Author(s):  
Rajibul Islam ◽  
Barun Ghosh ◽  
Carmine Autieri ◽  
Sugata Chowdhury ◽  
Arun Bansil ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spin Polarization ◽  
Bottom Up

Electronic Structure of Defects in Fcc-C22

2006 ◽  
Vol 965 ◽  
Author(s):  
Helder Sousa Domingos
Keyword(s):  
Electronic Structure ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Spin Polarization ◽  
Dopant Concentration ◽  
Magnetic Polarization ◽  
Carbon Allotrope

ABSTRACTClassical and ab-initio calculations were carried out on bulk defects and surfaces of the carbon allotrope Fcc-C22. The results revealed a number of possible defects with spin polarization and one with antiferromagnetic character. The surfaces were shown to be able to host magnetic polarization. Extrinsic light dopants (H and N) were shown to introduce spin polarization for small dopant concentration and to metallize the systems for large concentrations.

scholarly journals Electronic structure of a subnanometer wide bottom-up fabricated graphene nanoribbon: End states, band gap, and dispersion

2012 ◽  
Vol 86 (8) ◽  
Author(s):  
C. Bronner ◽  
F. Leyssner ◽  
S. Stremlau ◽  
M. Utecht ◽  
P. Saalfrank ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Graphene Nanoribbon ◽  
Bottom Up

scholarly journals Electronic structure and spin polarization of Co/black phosphorus interface

2020 ◽  
Vol 499 ◽  
pp. 166297 ◽  
Author(s):  
Baoxing Liu ◽  
Haipeng Xie ◽  
Yuquan Liu ◽  
Can Wang ◽  
Shitan Wang ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spin Polarization ◽  
Black Phosphorus

Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Metal Oxide ◽  
Spin Polarization ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ferromagnetic Transition ◽  
Oxide Interface ◽  
Oxide Interfaces ◽  
Structure Of Metal

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

How Many Fe layers Cause TMR?

2006 ◽  
Vol 941 ◽  
Author(s):  
Christian Heiliger ◽  
Peter Zahn ◽  
Ingrid Mertig
Keyword(s):  
Electronic Structure ◽  
Ab Initio ◽  
Structural Properties ◽  
Spin Polarization ◽  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Tunneling Current ◽  
Electronic Structure Calculations ◽  
High Spin Polarization ◽  
Structure Calculations

ABSTRACTThe influence of the structural properties of the leads of planar tunnel junctions on the tunneling current is investigated by means of ab initio electronic structure calculations. In particular, a NM/Fe/MgO/Fe/NM tunnel junction with non-magnetic (NM) leads and finite Fe spacer layers between the leads and the MgO barrier is discussed. The conductance is calculated as a function of the number of Fe layers. The results show that even one iron layer next to the barrier is sufficient to obtain a high spin polarization and a high TMR ratio. This finding implies that similar results can be expected for tunnel junctions with nonmagnetic and even amorphous leads, if states of Δ1 symmetry are provided.

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