Graphene and NTCDA adsorbed on Ag(111): Temperature-dependent binding distance and phonon coupling to the interface state

2021 ◽  
Vol 104 (24) ◽  
Author(s):  
Lukas Eschmann ◽  
Jan Neuendorf ◽  
Michael Rohlfing
Keyword(s):  
Interface State ◽  
Phonon Coupling ◽  
Temperature Dependent ◽  
Binding Distance

Temperature dependent electron–phonon coupling of Au resolved via lattice dynamics measured with sub-picosecond infrared pulses

2021 ◽  
Vol 129 (19) ◽  
pp. 193104
Author(s):  
John A. Tomko ◽  
Sushant Kumar ◽  
Ravishankar Sundararaman ◽  
Patrick E. Hopkins
Keyword(s):  
Lattice Dynamics ◽  
Phonon Coupling ◽  
Temperature Dependent ◽  
Electron Phonon Coupling

scholarly journals Temperature-dependent electron-phonon coupling in La2−xSrxCuO4probed by femtosecond x-ray diffraction

2013 ◽  
Vol 88 (5) ◽  
Author(s):  
B. Mansart ◽  
M. J. G. Cottet ◽  
G. F. Mancini ◽  
T. Jarlborg ◽  
S. B. Dugdale ◽  
...  
Keyword(s):  
Phonon Coupling ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray ◽  
Electron Phonon Coupling

scholarly journals Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure

2008 ◽  
Vol 47 (7) ◽  
pp. 5426-5428 ◽  
Author(s):  
Kimihito Ooyama ◽  
Hiroki Kato ◽  
Marcin Miczek ◽  
Tamotsu Hashizume
Keyword(s):  
Interface State ◽  
Temperature Dependent ◽  
State Response

Temperature-Dependent Energy Gap Shift and Thermally Activated Transition in Multilayer CdTe/ZnTe Quantum Dots

2015 ◽  
Vol 15 (10) ◽  
pp. 8120-8124
Author(s):  
Minh Tan Man ◽  
Hong Seok Lee
Keyword(s):  
Quantum Dots ◽  
Energy Gap ◽  
Average Energy ◽  
Growth Conditions ◽  
Carrier Dynamics ◽  
Phonon Coupling ◽  
Temperature Quenching ◽  
Temperature Dependent ◽  
Thermally Activated ◽  
Best Fit

We investigated the influence of growth conditions on carrier dynamics in multilayer CdTe/ZnTe quantum dots (QDs) by monitoring the temperature dependence of the photoluminescence emission energy. The results were analyzed using the empirical Varshni and O’Donnell relations for temperature variation of the energy gap shift. Best fit values showed that the thermally activated transition between two different states occurs due to band low-temperature quenching with values separated by 5.0–6.5 meV. The addition of stack periods in multilayer CdTe/ZnTe QDs plays an important role in the energy gap shift, where the exciton binding energy is enhanced, and, conversely, the exciton-phonon coupling strength is suppressed with an average energy of 19.3–19.8 meV.

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