scholarly journals Collective excitations and quantum incompressibility in electron-hole bilayers

2021 ◽  
Vol 104 (11) ◽  
Author(s):  
S. De Palo ◽  
P. E. Trevisanutto ◽  
G. Senatore ◽  
G. Vignale
Keyword(s):  
Collective Excitations ◽  
Electron Hole

scholarly journals Collective Excitations in Electron-Hole Bilayers

2007 ◽  
Vol 98 (23) ◽  
Author(s):  
G. J. Kalman ◽  
P. Hartmann ◽  
Z. Donkó ◽  
K. I. Golden
Keyword(s):  
Collective Excitations ◽  
Electron Hole

Current Status of Solid-State X-Ray Systems

1985 ◽  
Vol 43 ◽  
pp. 158-161
Author(s):  
Martin Peckerar ◽  
Anastasios Tousimis
Keyword(s):  
Solid State ◽  
Electric Fields ◽  
Spectral Lines ◽  
Current Status ◽  
Mobile Charge ◽  
Electron Hole ◽  
X Ray ◽  
Sensing Systems ◽  
Transmission Electron ◽  
Electron Microscopes

Solid state x-ray sensing systems have been used for many years in conjunction with scanning and transmission electron microscopes. Such systems conveniently provide users with elemental area maps and quantitative chemical analyses of samples. Improvements on these tools are currently sought in the following areas: sensitivity at longer and shorter x-ray wavelengths and minimization of noise-broadening of spectral lines. In this paper, we review basic limitations and recent advances in each of these areas. Throughout the review, we emphasize the systems nature of the problem. That is. limitations exist not only in the sensor elements but also in the preamplifier/amplifier chain and in the interfaces between these components.Solid state x-ray sensors usually function by way of incident photons creating electron-hole pairs in semiconductor material. This radiation-produced mobile charge is swept into external circuitry by electric fields in the semiconductor bulk.

A correlation of CL emissions from Penrith sandstone with elemental distributions obtained by simultaneous SEM-CL and EDS analysis

1995 ◽  
Vol 53 ◽  
pp. 392-393
Author(s):  
Paul J. Wright
Keyword(s):  
Optical Microscope ◽  
Electron Gun ◽  
High Electron ◽  
Collection System ◽  
Electron Hole ◽  
Depositional Processes ◽  
Eds Analysis ◽  
Distribution Mapping ◽  
Backscattered Electron ◽  
Electron Imaging

Most industrial and academic geologists are familiar with the beautiful red and orange cathodoluminescence colours produced by carbonate minerals in an optical microscope with a cold cathode electron gun attached. The cement stratigraphies interpreted from colour photographs have been widely used to determine the post depositional processes which have modified sedimentary rock textures.However to study quartzose materials high electron densities and kV's are necessary to stimulate sufficient emission. A scanning electron microscope with an optical collection system and monochromator provides an adequate tool and gives the advantage of providing secondary and backscattered electron imaging as well as elemental analysis and distribution mapping via standard EDS/WDS facilities.It has been known that the incorporation of many elements modify the characteristics of the CL emissions from geological materials. They do this by taking up positions between the valence and conduction band thus providing sites to assist in the recombination of electron hole pairs.

On-line image readout in CTEM

1994 ◽  
Vol 52 ◽  
pp. 400-401
Author(s):  
K.-H. Herrmann ◽  
W. D. Rau ◽  
R. Sikeler
Keyword(s):  
Primary Electron ◽  
Digital Information ◽  
Electron Hole ◽  
Detection Technology ◽  
Long Time ◽  
On Line ◽  
Electron Image ◽  
Optical Transfer ◽  
Detection Quantum Efficiency ◽  
Technical Solutions

Quantitative recording of electron patterns and their rapid conversion into digital information is an outstanding goal which the photoplate fails to solve satisfactorily. For a long time, LLL-TV cameras have been used for EM adjustment but due to their inferior pixel number they were never a real alternative to the photoplate. This situation has changed with the availability of scientific grade slow-scan charged coupled devices (CCD) with pixel numbers exceeding 106, photometric accuracy and, by Peltier cooling, both excellent storage and noise figures previously inaccessible in image detection technology. Again the electron image is converted into a photon image fed to the CCD by some light optical transfer link. Subsequently, some technical solutions are discussed using the detection quantum efficiency (DQE), resolution, pixel number and exposure range as figures of merit.A key quantity is the number of electron-hole pairs released in the CCD sensor by a single primary electron (PE) which can be estimated from the energy deposit ΔE in the scintillator,

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Molecular dynamics studies of electron-hole bilayers

2000 ◽  
Vol 10 (PR5) ◽  
pp. Pr5-355-Pr5-358 ◽  
Author(s):  
Z. Donkó ◽  
G. J. Kalman
Keyword(s):  
Molecular Dynamics ◽  
Electron Hole
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