Switching the perpendicular magnetization of a magnetic insulator by magnon transfer torque

2021 ◽  
Vol 104 (9) ◽  
Author(s):  
C. Y. Guo ◽  
C. H. Wan ◽  
M. K. Zhao ◽  
C. Fang ◽  
T. Y. Ma ◽  
...  
Keyword(s):  
Perpendicular Magnetization ◽  
Magnetic Insulator

Domains and domain nucleation in magnetron-sputtered CoCr thin films

1993 ◽  
Vol 51 ◽  
pp. 1046-1047
Author(s):  
B. G. Demczyk
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Magnetic Domain ◽  
Domain Size ◽  
Film Plane ◽  
Magnetic Domain Structure ◽  
Perpendicular Magnetization ◽  
Columnar Grains ◽  
Reversal Mechanism ◽  
Lorentz Transmission Electron Microscopy

CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.

scholarly journals Simulation Analysis of Voltage Distribution of 500kV Degraded Magnetic Insulator String

2020 ◽  
Vol 617 ◽  
pp. 012017
Author(s):  
Zhou Xueming ◽  
Hu Danhui ◽  
Feng Zhiqiang ◽  
Zhou Ding ◽  
Mao Xiaopo
Keyword(s):  
Simulation Analysis ◽  
Voltage Distribution ◽  
Magnetic Insulator

scholarly journals Charge-spin interconversion in epitaxial Pt probed by spin-orbit torques in a magnetic insulator

2021 ◽  
Vol 5 (6) ◽  
Author(s):  
Peng Li ◽  
Lauren J. Riddiford ◽  
Chong Bi ◽  
Jacob J. Wisser ◽  
Xiao-Qi Sun ◽  
...  
Keyword(s):  
Spin Orbit ◽  
Magnetic Insulator

Effect of Orientation and Microstructure on the Magnetic Anisotropy of Co/Pd Multilayers

1989 ◽  
Vol 151 ◽  
Author(s):  
Frits J. A. den Broeder ◽  
Dick Kuiper ◽  
Willem Hoving
Keyword(s):  
Magnetic Anisotropy ◽  
Deposition Temperature ◽  
Structural Deformation ◽  
Perpendicular Anisotropy ◽  
Modulation Period ◽  
Perpendicular Magnetization ◽  
Plane Anisotropy ◽  
Interface Anisotropy

ABSTRACTCo/Pd multilayers containing one to eight atomic layers of cobalt and ten atomic layers of palladium per modulation period were prepared in two orienotarteiottnoss, [111]fcc and [001]fcc. The [111] films were polycrystalline, the [001] films were epitaxial.In this paper we compare the magnetic anisotropy of both types of films, which can be described by an interface anisotropy contribution favouring perpendicular magnetization and a volume contribution favouring in-plane magnetization. Depending on the deposition temperature, a perpendicular anisotropy for [111] films is found for up to about six atomic layers of Co. The [001] films however, show perpendicular anisotropy only for Co monolayers or Co bilayers. The large difference between the anisotropies in the two orientations is mainly caused by a strong in-plane anisotropy volume term which exists for [001] films, and which is attributed to the structural deformation of the Co layers from cubic to tetragonal. For both orientations a higher deposition temperature is found to lead to an increase of the interface anisotropy due to smoothing of the layers.

Conduction mechanisms in the magnetic insulator [(CH3)2NH2]2CoCl4

2005 ◽  
Vol 78 (12) ◽  
pp. 883-894 ◽  
Author(s):  
M. F. Mostafa ◽  
A. S. Atallah ◽  
J. K. Mulhem
Keyword(s):  
Conduction Mechanisms ◽  
Magnetic Insulator

scholarly journals Perpendicular magnetization reversal in Pt/[Co/Ni]3/Al multilayers via the spin Hall effect of Pt

2016 ◽  
Vol 108 (8) ◽  
pp. 082406 ◽  
Author(s):  
J.-C. Rojas-Sánchez ◽  
P. Laczkowski ◽  
J. Sampaio ◽  
S. Collin ◽  
K. Bouzehouane ◽  
...  
Keyword(s):  
Hall Effect ◽  
Magnetization Reversal ◽  
Spin Hall Effect ◽  
Perpendicular Magnetization

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

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