Role of free-carrier interaction in strong-field excitations in semiconductors

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
Richard Hollinger ◽  
Elissa Haddad ◽  
Maximilian Zapf ◽  
Valentina Shumakova ◽  
Paul Herrmann ◽  
...  
Keyword(s):  
Strong Field ◽  
Free Carrier ◽  
Carrier Interaction

Examining the Role of Free Carrier Concentration on the Phonon Lifetimes in GaN Using Raman Spectroscopy

2007 ◽  
Author(s):  
Thomas Beechem ◽  
Samuel Graham
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Performance ◽  
Uncertainty Relation ◽  
Free Carrier ◽  
Optical Phonons ◽  
Time Uncertainty ◽  
Longitudinal Phonon ◽  
Optical Modes ◽  
Carrier Interaction

The lifetimes of polar optical phonons are known to affect the electrical and thermal performance of gallium nitride (GaN) based devices. Utilizing the energy-time uncertainty relation, this study investigates these lifetimes using Raman spectroscopy for a series of samples having free carrier concentrations ranging from 1.24e18 to 3e17 cm−3. By measuring across the typical operating temperatures of these devices, the mechanisms responsible for scattering of 5 separate optical modes are elucidated. It is found that phonon-carrier interaction directly determines the lifetime of the polar optical A1(LO) mode while indirectly influencing the modes into which this longitudinal phonon decays, namely, E1 and A1(TO). Thus understanding the entire phonon energy cascade is vital both for management of the so called “hot phonon” effect as well as modeling of carrier-phonon interactions.

Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond

2009 ◽  
Vol 80 (5) ◽  
Author(s):  
R. M. MacLeod ◽  
S. W. Murray ◽  
J. P. Goss ◽  
P. R. Briddon ◽  
R. J. Eyre
Keyword(s):  
High Temperatures ◽  
Free Carrier ◽  
Carrier Energy

scholarly journals Control of strong-field ionization in ferroelectric lithium niobate: Role of the spontaneous polarization

2020 ◽  
Vol 101 (18) ◽  
Author(s):  
Vincent Wanie ◽  
Tian-Jiao Shao ◽  
Philippe Lassonde ◽  
Heide Ibrahim ◽  
Jude Deschamps ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Spontaneous Polarization ◽  
Strong Field ◽  
Field Ionization ◽  
Strong Field Ionization

Critical role of nanoinclusions in silver selenide nanocomposites as a promising room temperature thermoelectric material

2019 ◽  
Vol 7 (9) ◽  
pp. 2646-2652 ◽  
Author(s):  
Khak Ho Lim ◽  
Ka Wai Wong ◽  
Yu Liu ◽  
Yu Zhang ◽  
Doris Cadavid ◽  
...  
Keyword(s):  
Seebeck Coefficient ◽  
Room Temperature ◽  
Opposite Effect ◽  
Critical Role ◽  
Free Carrier ◽  
Silver Selenide ◽  
Band Bending ◽  
Seebeck Coefficients ◽  
Electrical Conductivities

The introduction of nonmetal nanoinclusions within Ag2Se results in an interphase band bending that promotes electron filtering and increase Seebeck coefficient. Similar loading of metal nanoinclusions provided an opposite effect-modulating free carrier concentration, as characterized by superior electrical conductivities and lower Seebeck coefficients.

The intrinsic free carrier mobility in AlGaN/GaN quantum wells

2004 ◽  
Vol 831 ◽  
Author(s):  
F. Carosella ◽  
M. Germain ◽  
J.-L. Farvacque
Keyword(s):  
Quantum Wells ◽  
Carrier Mobility ◽  
Electron System ◽  
Relaxation Mechanism ◽  
Free Carrier ◽  
Free Carriers ◽  
Scattering Mechanisms ◽  
Carrier Interaction ◽  
Scattering Strength ◽  
Two Bodies

ABSTRACTThe aim of this contribution is to determine theoretically the maximum mobility that can be expected in AlGaN/GaN quantum wells as soon as the free carriers are only submitted to intrinsic scattering mechanisms associated with phonons and the carrier-carrier interaction. In our model, we consider that the carrier-carrier two bodies collisions do not constitute by themselves a relaxation mechanism since they conserve the momentum and the energy of the electron system. Thus, we assume that the free carriers act only through their contribution to the dynamical dielectric response of the material and, at least, through their collective behavior resulting into plasmons which, when damped, constitute now a real relaxation mechanism. The full scattering strength is connected with the imaginary part of the total reversed dielectric function including the lattice and the free carrier contributions. This approach automatically includes the scattering mechanisms associated with hybrid phonon/plasmon particles.

The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Free Carrier ◽  
Carrier Dynamics ◽  
Ultrafast Laser ◽  
Ultrafast Laser Spectroscopy ◽  
Ultrafast Carrier ◽  
Scattering Time

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

Role of Rotational Wave Packets in Strong Field Experiments

2013 ◽  
Vol 111 (26) ◽  
Author(s):  
S. J. Weber ◽  
M. Oppermann ◽  
J. P. Marangos
Keyword(s):  
Field Experiments ◽  
Strong Field ◽  
Wave Packets ◽  
Rotational Wave
Sign in / Sign up

Export Citation Format

Share Document