scholarly journals Decoupling between propagating acoustic waves and two-level systems in hydrogenated amorphous silicon

2021 ◽  
Vol 104 (2) ◽  
Author(s):  
M. Molina-Ruiz ◽  
H. C. Jacks ◽  
D. R. Queen ◽  
T. H. Metcalf ◽  
X. Liu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Acoustic Waves ◽  
Hydrogenated Amorphous Silicon ◽  
Two Level Systems ◽  
Hydrogenated Amorphous

Two-level systems in hydrogenated amorphous silicon: NMR studies

1985 ◽  
Vol 32 (9) ◽  
pp. 6062-6065 ◽  
Author(s):  
J. B. Boyce ◽  
M. Stutzmann ◽  
S. E. Ready
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Nmr Studies ◽  
Two Level Systems ◽  
Hydrogenated Amorphous

scholarly journals Two-level systems and growth-induced metastability in hydrogenated amorphous silicon

2020 ◽  
Vol 7 (9) ◽  
pp. 095201
Author(s):  
M Molina-Ruiz ◽  
H C Jacks ◽  
D R Queen ◽  
Q Wang ◽  
R S Crandall ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Two Level Systems ◽  
Hydrogenated Amorphous

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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