Quantum Hall effect and Shubnikov–de Haas oscillations in a high-mobility p -type PbTe quantum well

2021 ◽  
Vol 103 (20) ◽  
Author(s):  
F. S. Pena ◽  
S. Wiedmann ◽  
E. Abramof ◽  
D. A. W. Soares ◽  
P. H. O. Rappl ◽  
...  
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Shubnikov De Haas Oscillations ◽  
P Type

A NEW TWO-DIMENSIONAL ELECTRON-HOLE SYSTEM

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2888-2892
Author(s):  
Z. D. KVON ◽  
E. B. OLSHANETSKY ◽  
D. A. KOZLOV ◽  
N. N. MIKHAILOV ◽  
S. A. DVORETSKII
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Hole ◽  
Mercury Telluride ◽  
Lower Mobility

A two-dimensional electron-hole system consisting of light high-mobility electrons with a density of Ns = (4 - 7) × 1010 cm -2 and heavier lower-mobility holes with a density Ps = (0.7 - 1.6) × 1011 cm -2 has been discovered in a quantum well based on mercury telluride with the (013) surface orientation. The system exhibits a number of specific magnetotransport properties in both the classical magnetotransport (positive magnetoresistance and sign-variable Hall effect) and the quantum Hall effect regime. These properties are associated with the coexistence of two-dimensional electrons and holes and actually manifest the first realization of a two-dimensional semimetal.

scholarly journals Half integer quantum Hall effect in high mobility single layer epitaxial graphene

2009 ◽  
Vol 95 (22) ◽  
pp. 223108 ◽  
Author(s):  
Xiaosong Wu ◽  
Yike Hu ◽  
Ming Ruan ◽  
Nerasoa K Madiomanana ◽  
John Hankinson ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
High Mobility ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Half Integer ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

2013 ◽  
Vol 175-176 ◽  
pp. 119-122 ◽  
Author(s):  
Cui Yu ◽  
Jia Li ◽  
Kuanghong Gao ◽  
Tie Lin ◽  
Qingbin Liu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Weak Localization ◽  
Epitaxial Graphene ◽  
P Type

scholarly journals AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

JETP Letters ◽  
2019 ◽  
Vol 110 (1) ◽  
pp. 68-73 ◽  
Author(s):  
A. A. Dmitriev ◽  
I. L. Drichko ◽  
I. Yu. Smirnov ◽  
A. K. Bakarov ◽  
A. A. Bykov
Keyword(s):  
Quantum Well ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Dc Conductivities ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Quantum Hall effect in a bulk antiferromagnet EuMnBi2 with magnetically confined two-dimensional Dirac fermions

2016 ◽  
Vol 2 (1) ◽  
pp. e1501117 ◽  
Author(s):  
Hidetoshi Masuda ◽  
Hideaki Sakai ◽  
Masashi Tokunaga ◽  
Yuichi Yamasaki ◽  
Atsushi Miyake ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Magnetic Order ◽  
Quantum Hall ◽  
High Mobility ◽  
Interlayer Coupling ◽  
Dirac Fermions ◽  
Energy Excitation ◽  
Integer Quantum Hall Effect ◽  
Dirac Materials

For the innovation of spintronic technologies, Dirac materials, in which low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems because of the fascinating magnetotransport associated with extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi2, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility of more than 10,000 cm2/V s, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.

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