scholarly journals Symmetry analysis of tensors in the honeycomb lattice of edge-sharing octahedra

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
Franz G. Utermohlen ◽  
Nandini Trivedi
2015 ◽  
Vol 354 ◽  
pp. 213-243 ◽  
Author(s):  
N.D. Vlasii ◽  
C.P. Hofmann ◽  
F.-J. Jiang ◽  
U.-J. Wiese

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Rui-Chun Xiao ◽  
Ding-Fu Shao ◽  
Yu-Hang Li ◽  
Hua Jiang

AbstractRecent discovered two-dimensional (2D) antiferromagnetic (AFM) van der Waals quantum materials have attracted increasing interest due to the emergent exotic physical phenomena. The spintronic properties utilizing the intrinsic AFM state in 2D antiferromagnets, however, have been rarely found. Here we show that the spin photogalvanic effect (SPGE), which has been predicted in three-dimensional (3D) antiferromagnets, can intrinsically emerge in 2D antiferromagnets for promising spintronic applications. Based on the symmetry analysis of possible AFM orders in the honeycomb lattice, we conclude suitable 2D AFM candidate materials for realizing the SPGE. We choose two experimentally synthesized 2D collinear AFM materials, monolayer MnPS3, and bilayer CrCl3, as representative materials to perform first-principles calculations, and find that they support sizable SPGE. The SPGE in collinear 2D AFM materials can be utilized to generate pure spin current in a contactless and ultra-fast way.


1994 ◽  
Vol 4 (9) ◽  
pp. 1341-1352
Author(s):  
J. M. Perez-Mato ◽  
L. Elcoro

2018 ◽  
Author(s):  
Eric Jason Albright ◽  
James D. McHardy ◽  
Scott D. Ramsey ◽  
Joseph H. Schmidt

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.


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