scholarly journals Chiral properties of the zero-field spiral state and field-induced magnetic phases of the itinerant kagome metal YMn6Sn6

2021 ◽  
Vol 103 (9) ◽  
Author(s):  
Rebecca L. Dally ◽  
Jeffrey W. Lynn ◽  
Nirmal J. Ghimire ◽  
Dina Michel ◽  
Peter Siegfried ◽  
...  
Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1128
Author(s):  
Zheng Wang ◽  
Hao Wu ◽  
Yong Liu ◽  
Chang Liu

This paper presents the magnetic properties of chrome ion (Cr+) implanted InxGa1−xN (x = 0.1, 0.3, 0.5 and 1.0) nanostructures grown by molecular beam epitaxy (MBE). The Cr+ implantation was conducted at 110 keV with three doses, namely 2.6 × 1015, 5.3 × 1015, and 1.3 × 1016 ions/cm2. The as-grown nanostructures exhibited diamagnetism before and after ion implantation without annealing. However, after annealing, the nanostructures exhibited ferromagnetism at room temperature. The saturation magnetization (Ms) and coercive force (Hc) increase with increasing Cr+ dose. The Ms of the InN nanorods with diameters of 100–160 nm is larger than that of those with small diameters of 60–80 nm. For InGaN nanostructures, the indium concentration—that is, the band structure—is more important than the diameters of the nanorods for the same doping level of Cr ions. The Ms of InGaN nanorods with an indium concentration of 10% reaches its maximum. The zero-field cooled (ZFC) and field-cooled (FC) curves show that nanostructures have no parasitic magnetic phases.


Author(s):  
Z. L. Wang ◽  
C. L. Briant ◽  
J. DeLuca ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
...  

Recent studies have shown that spray-pyrolyzed films of the Tl-1223 compound (TlxBa2Ca2Cu3Oy, with 0.7 < × < 0.95) on polycrystalline yttrium stabilized zirconia substrates can be prepared which have critical current density Jc near 105 A/cm2 at 77 K, in zero field. The films are polycrystalline, have excellent c-axis alignment, and show little evidence of weak-link behavior. Transmission electron microscopy (TEM) studies have shown that most grain boundaries have small misorientation angles. It has been found that the films have a nigh degree of local texture indicative of colonies of similarly oriented grains. It is believed that inter-colony conduction is enhanced by a percolative network of small angle boundaries at colony interfaces. It has also been found that Jc is increased by a factor of 4 - 5 after the films were annealed at 600 °C in oxygen. This study is thus carried out to determine the effect on grain boundary chemistry of the heat treatment.


2021 ◽  
Author(s):  
Júlia Mayans ◽  
Albert Escuer

A possible relation between the value of the axial Zero Field Splitting and the occurrence of field-induced slow magnetic relaxation has been established for a new gadolinium(iii) compound.


1979 ◽  
Vol 40 (C1) ◽  
pp. C1-335-C1-337 ◽  
Author(s):  
J. Carmeliet ◽  
J. C. Dehaes ◽  
W. Singer

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-887-C8-888 ◽  
Author(s):  
K. Hiraoka ◽  
N. Fujiya ◽  
K. Kojima ◽  
T. Hihara
Keyword(s):  

1993 ◽  
Vol 07 (01n03) ◽  
pp. 867-870 ◽  
Author(s):  
H. SHIRAISHI ◽  
T. HORI ◽  
Y. YAMAGUCHI ◽  
S. FUNAHASHI ◽  
K. KANEMATSU

The magnetic susceptibility measurements have been made on antiferromagnetic compounds Mn1–xFexSn2 and the magnetic phase diagram was illustrated. The high temperature magnetic phases I and III, major phases, were analyzed on the basis of molecular field theory and explained the change of magnetic structure I⇌III occured at x≈0.8.


Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.


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