scholarly journals Comment on “Spin-orbit interaction and spin selectivity for tunneling electron transfer in DNA”

2021 ◽  
Vol 103 (7) ◽  
Author(s):  
Ora Entin-Wohlman ◽  
Amnon Aharony ◽  
Yasuhiro Utsumi
Keyword(s):  
Electron Transfer ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tunneling Electron ◽  
Spin Orbit Interaction

scholarly journals Spin-orbit interaction and spin selectivity for tunneling electron transfer in DNA

2020 ◽  
Vol 101 (24) ◽  
Author(s):  
Solmar Varela ◽  
Iskra Zambrano ◽  
Bertrand Berche ◽  
Vladimiro Mujica ◽  
Ernesto Medina
Keyword(s):  
Electron Transfer ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tunneling Electron ◽  
Spin Orbit Interaction

The Spin-Orbit Interaction Controls Photoinduced Interfacial Electron Transfer in Fullerene-Perovskite Heterojunctions: C60 versus C70

2021 ◽  
Author(s):  
Jia-Jia Yang ◽  
Xiang-Yang Liu ◽  
Zi-Wen Li ◽  
Thomas Frauenheim ◽  
Chi-Yung Yam ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electron Transfer ◽  
Density Functional ◽  
Interfacial Properties ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Interfacial Electron Transfer ◽  
Dft Methods ◽  
Functional Theory ◽  
Spin Orbit Interaction

Here, we used collinear and noncollinear density functional theory (DFT) methods to explore the interfacial properties of two heterojunctions between a fullerene (C60 and C70) and the MAPbI3(110) surface. Methodologically,...

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry

scholarly journals Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  
Keyword(s):  
Layer Structure ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Device Layer ◽  
Physical Origin ◽  
Quantum Devices ◽  
Spin Orbit Interaction ◽  
Topological Quantum ◽  
Narrow Bandgap ◽  
Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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