scholarly journals First-principles study of the anomalous Hall effect based on exact muffin-tin orbitals

2021 ◽  
Vol 103 (5) ◽  
Author(s):  
Lei Wang ◽  
Tai Min ◽  
Ke Xia
Keyword(s):  
Hall Effect ◽  
First Principles ◽  
Anomalous Hall Effect ◽  
First Principles Study

scholarly journals Tailoring the anomalous Hall effect of SrRuO3 thin films by strain: A first principles study

2021 ◽  
Vol 129 (9) ◽  
pp. 093904
Author(s):  
Kartik Samanta ◽  
Marjana Ležaić ◽  
Stefan Blügel ◽  
Yuriy Mokrousov
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
First Principles ◽  
Anomalous Hall Effect ◽  
First Principles Study

First-principles study of bilayer hexagonal structure of SN2 nanosheet: a highly stable non-metal platform for the quantum anomalous Hall effect

2021 ◽  
Author(s):  
Yanli Wang ◽  
Yi Ding
Keyword(s):  
Transition Metal ◽  
Hall Effect ◽  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Anomalous Hall Effect ◽  
Hexagonal Structure ◽  
Two Dimensional ◽  
First Principles Study ◽  
Quantum Anomalous Hall Effect ◽  
Metal Dichalcogenides

Although layered metal dinitrides (MN2) have been proposed as the cousins of transition-metal dichalcogenides, the non-MoS2-type geometries are found to be more favourable in two-dimensional (2D) MN2 nanosheets. In this...

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

2012 ◽  
Vol 86 (16) ◽  
Author(s):  
Wanxiang Feng ◽  
Yugui Yao ◽  
Wenguang Zhu ◽  
Jinjian Zhou ◽  
Wang Yao ◽  
...  
Keyword(s):  
Hall Effect ◽  
First Principles ◽  
Spin Hall Effect ◽  
Group Vi ◽  
First Principles Study

scholarly journals Temperature-dependent resistivity and anomalous Hall effect in NiMnSb from first principles

2019 ◽  
Vol 99 (17) ◽  
Author(s):  
David Wagenknecht ◽  
Libor Šmejkal ◽  
Zdeněk Kašpar ◽  
Jairo Sinova ◽  
Tomáš Jungwirth ◽  
...  
Keyword(s):  
Hall Effect ◽  
First Principles ◽  
Anomalous Hall Effect ◽  
Temperature Dependent ◽  
Temperature Dependent Resistivity

scholarly journals Ferroelectric nonlinear anomalous Hall effect in few-layer WTe2

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Hua Wang ◽  
Xiaofeng Qian
Keyword(s):  
Magnetic Field ◽  
Hall Effect ◽  
Time Reversal ◽  
First Principles ◽  
Hall Current ◽  
Anomalous Hall Effect ◽  
New Order ◽  
Berry Curvature ◽  
Weyl Semimetals ◽  
Nonlinear Quantum

AbstractUnder broken time reversal symmetry such as in the presence of external magnetic field or internal magnetization, a transverse voltage can be established in materials perpendicular to both longitudinal current and applied magnetic field, known as classical Hall effect. However, this symmetry constraint can be relaxed in the nonlinear regime, thereby enabling nonlinear anomalous Hall current in time-reversal invariant materials – an underexplored realm with exciting new opportunities beyond classical linear Hall effect. Here, using group theory and first-principles theory, we demonstrate a remarkable ferroelectric nonlinear anomalous Hall effect in time-reversal invariant few-layer WTe2 where nonlinear anomalous Hall current switches in odd-layer WTe2 except 1T′ monolayer while remaining invariant in even-layer WTe2 upon ferroelectric transition. This even-odd oscillation of ferroelectric nonlinear anomalous Hall effect was found to originate from the absence and presence of Berry curvature dipole reversal and shift dipole reversal due to distinct ferroelectric transformation in even and odd-layer WTe2. Our work not only treats Berry curvature dipole and shift dipole on an equal footing to account for intraband and interband contributions to nonlinear anomalous Hall effect, but also establishes Berry curvature dipole and shift dipole as new order parameters for noncentrosymmetric materials. The present findings suggest that ferroelectric metals and Weyl semimetals may offer unprecedented opportunities for the development of nonlinear quantum electronics.

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