scholarly journals Nonlinear Hall effect in Weyl semimetals induced by chiral anomaly

2021 ◽  
Vol 103 (4) ◽  
Author(s):  
Rui-Hao Li ◽  
Olle G. Heinonen ◽  
Anton A. Burkov ◽  
Steven S.-L. Zhang
2017 ◽  
Vol 119 (17) ◽  
Author(s):  
S. Nandy ◽  
Girish Sharma ◽  
A. Taraphder ◽  
Sumanta Tewari

2018 ◽  
Vol 382 (44) ◽  
pp. 3205-3210
Author(s):  
Zhi-Peng Gao ◽  
Zhi Li ◽  
Dan-Wei Zhang

2018 ◽  
Vol 30 (06) ◽  
pp. 1840007 ◽  
Author(s):  
Jürg Fröhlich

Starting with a description of the motivation underlying the analysis presented in this paper and a brief survey of the chiral anomaly, I proceed to review some basic elements of the theory of the quantum Hall effect in 2D incompressible electron gases in an external magnetic field, (“Hall insulators”). I discuss the origin and role of anomalous chiral edge currents and of anomaly inflow in 2D insulators with explicitly or spontaneously broken time reversal, i.e. in Hall insulators and “Chern insulators”. The topological Chern–Simons action yielding the large-scale response equations for the 2D bulk of such states of matter is displayed. A classification of Hall insulators featuring quasi-particles with abelian braid statistics is sketched. Subsequently, the chiral edge spin currents encountered in some time-reversal invariant 2D topological insulators with spin-orbit interactions and the bulk response equations of such materials are described. A short digression into the theory of 3D topological insulators, including “axionic insulators”, follows next. To conclude, some open problems are described and a problem in cosmology related to axionic insulators is mentioned. As far as the quantum Hall effect and the spin currents in time-reversal invariant 2D topological insulators are concerned, this review is based on extensive work my collaborators and I carried out in the early 1990’s. Dedicated to the memory of Ludvig Dmitrievich Faddeev — a great scientist who will be remembered


2020 ◽  
Vol 213 ◽  
pp. 02016
Author(s):  
Zhi Lin

Starting from crystal, electronic and magnetic structures of Heusler compounds, this paper studies the new topological materials related to Heusler compounds and their topological properties, such as anomalous Hall effect, skyrmions, chiral anomaly, Dirac fermion, Weyl fermion, transverse Nernst thermoelectric effect, thermal spintronics and topological surface states. It can be discovered that the topological state of Heusler compound can be well protected due to its high symmetry, thus producing rich topological properties. Heusler materials belonged to Weyl semimetals usually have strong anomalous Hall effect, and the Heusler materials with doping or Anomalous Nernst Effect (ANE) usually have higher thermoelectric figure of merit. These anomalous effects are closely related to the strong spin–orbit interaction. In application, people can use the non-dissipative edge state of quantum anomalous Hall effect to develop a new generation of low-energy transistors and electronic devices. The conversion efficiency of thermoelectric materials can be improved by ANE, and topological superconductivity can be used to promote the progress of quantum computation.


2020 ◽  
Vol 101 (16) ◽  
Author(s):  
Shiva Heidari ◽  
Reza Asgari
Keyword(s):  

2008 ◽  
Vol 22 (17) ◽  
pp. 2675-2689 ◽  
Author(s):  
PAUL BRACKEN

The chiral anomaly in (2+1)-dimensions and its relationship to the zero mode of the Dirac equation in the massless case is studied. Solutions are obtained for the Dirac equation under a vector potential which generates a constant magnetic field. It is shown that there is an anomaly term associated with the corresponding chiral transformation. It can be calculated by using the regularization procedure of Fujikawa. The results are applied to the quantum Hall effect.


2019 ◽  
Vol 100 (11) ◽  
Author(s):  
S. Nandy ◽  
A. Taraphder ◽  
Sumanta Tewari
Keyword(s):  

2019 ◽  
Vol 99 (14) ◽  
Author(s):  
Jan Behrends ◽  
Sthitadhi Roy ◽  
Michael H. Kolodrubetz ◽  
Jens H. Bardarson ◽  
Adolfo G. Grushin

Sign in / Sign up

Export Citation Format

Share Document