scholarly journals Revealing electromigration on dielectrics and metals through the step-bunching instability

2020 ◽  
Vol 102 (3) ◽  
Author(s):  
Victor Usov ◽  
Cormac Ó Coileáin ◽  
Alexander N. Chaika ◽  
Sergey I. Bozhko ◽  
Valery N. Semenov ◽  
...  
Keyword(s):  
Step Bunching

Rem Study of Current Effect on the Structure of Clean Si(111) Surface

1990 ◽  
Vol 48 (1) ◽  
pp. 306-307
Author(s):  
A. Yamanaka ◽  
H. Ohse ◽  
K. Yagi
Keyword(s):  
The Other ◽  
Current Direction ◽  
Clean Surface ◽  
Current Effect ◽  
Atomic Steps ◽  
Step Bunching ◽  
Terrace Width ◽  
Step Down ◽  
A Current

Recently current effects on clean and metal adsorbate surfaces have attracted much attention not only because of interesting phenomena but also because of practically importance in treatingclean and metal adsorbate surfaces [1-6]. In the former case, metals deposited migrate on the deposit depending on the current direction and a patch of the deposit expands on the clean surface [1]. The migration is closely related to the adsorbate structures and substrate structures including their anisotropy [2,7]. In the latter case, configurations of surface atomic steps depends on the current direction. In the case of Si(001) surface equally spaced array of monatom high steps along the [110] direction produces the 2x1 and 1x2 terraces. However, a relative terrace width of the two domain depends on the current direction; a step-up current widen terraces on which dimers are parallel to the current, while a step-down current widen the other terraces [3]. On (111) surface, a step-down current produces step bunching at temperatures between 1250-1350°C, while a step-up current produces step bunching at temperatures between 1050-1250°C [5].In the present paper, our REM observations on a current induced step bunching, started independently, are described.Our results are summarized as follows.(1) Above around 1000°C a step-up current induces step bunching. The phenomenon reverses around 1200 C; a step-down current induces step bunching. The observations agree with the previous reports [5].

scholarly journals Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy

2000 ◽  
Vol 61 (15) ◽  
pp. 9983-9985 ◽  
Author(s):  
M. H. Xie ◽  
S. H. Cheung ◽  
L. X. Zheng ◽  
Y. F. Ng ◽  
Huasheng Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Step Bunching

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

2003 ◽  
Vol 12 (2) ◽  
pp. 218-221 ◽  
Author(s):  
Zhou Da-Yong ◽  
Lan Qing ◽  
Kong Yun-Chuan ◽  
Miao Zhen-Hua ◽  
Feng Song-Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Quantum Wire ◽  
Molecular Beam ◽  
Step Bunching ◽  
Wire Arrays

Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface

2017 ◽  
Vol 122 (7) ◽  
pp. 075702 ◽  
Author(s):  
Yuki Tabuchi ◽  
Koji Ashida ◽  
Masashi Sonoda ◽  
Tadaaki Kaneko ◽  
Noboru Ohtani ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Layer Surface ◽  
Step Bunching

Controlling the morphology transition between step-flow growth and step-bunching growth

2017 ◽  
Vol 478 ◽  
pp. 187-192 ◽  
Author(s):  
Konrad Bellmann ◽  
Udo W. Pohl ◽  
Christian Kuhn ◽  
Tim Wernicke ◽  
Michael Kneissl
Keyword(s):  
Step Bunching ◽  
Morphology Transition ◽  
Step Flow ◽  
Step Flow Growth

Scanning tunneling microscopy of step bunching on vicinal GaAs(100) annealed at high temperatures

1994 ◽  
Vol 65 (6) ◽  
pp. 722-724 ◽  
Author(s):  
S. L. Skala ◽  
S. T. Chou ◽  
K.‐Y. Cheng ◽  
J. R. Tucker ◽  
J. W. Lyding
Keyword(s):  
Scanning Tunneling Microscopy ◽  
High Temperatures ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Step Bunching

Theory of impurity-induced step bunching

1994 ◽  
Vol 49 (8) ◽  
pp. 5554-5564 ◽  
Author(s):  
Daniel Kandel ◽  
John D. Weeks
Keyword(s):  
Step Bunching

scholarly journals Scaling laws for step bunching on vicinal surfaces: Role of the dynamical and chemical effects

2021 ◽  
Vol 104 (3) ◽  
Author(s):  
L. Benoit–Maréchal ◽  
M. E. Jabbour ◽  
N. Triantafyllidis
Keyword(s):  
Scaling Laws ◽  
Vicinal Surfaces ◽  
Step Bunching ◽  
Chemical Effects

Anisotropic graphene growth accompanied by step bunching on a dynamic copper surface

2012 ◽  
Vol 24 (2) ◽  
pp. 025603 ◽  
Author(s):  
Kenjiro Hayashi ◽  
Shintaro Sato ◽  
Naoki Yokoyama
Keyword(s):  
Copper Surface ◽  
Step Bunching ◽  
Graphene Growth
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